IRFR1018ETRPBF vs IRFR3806TRPBF Comparison
Detailed side-by-side comparison of IRFR1018ETRPBF by Infineon and IRFR3806TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFR1018ETRPBF | IRFR3806TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.36 | $0.52 |
| FET Type | N-Channel | β |
| Drain-to-Source Voltage (Vdss) | 60 V | β |
| Continuous Drain Current (Id) | 79 A (Tc) | β |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | β |
| Rds(on) Max @ Vgs=10V | 8.4 mΞ© | β |
| Rds(on) Max @ Vgs=4.5V | [DATA_NEEDED: Rds(on) at 4.5V] | β |
| Gate Threshold Voltage (Vgs(th)) | 2.0 V to 4.0 V | β |
| Total Gate Charge (Qg) | 46 nC | 22 nC |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | β |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | β |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: Crss] | β |
| Maximum Power Dissipation (Pd) | 110 W (Tc) | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C | -55 C to +175 C |
| Package | TO-252AA (D-Pak) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | HEXFET | HEXFET (IR MOSFET) |
| RoHS Status | Compliant | β |
| Lead-Free | Yes | β |
| MSL Level | 1 | β |
| Avalanche Rated | Yes | Yes (HEXFET family) |
| Transistor Polarity | β | N-Channel |
| MOSFET Operating Mode | β | Enhancement |
| Drain-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at Tc | β | 43 A |
| On-State Resistance RDS(on) max | β | 15.8 mOhm at VGS = 10 V |
| Power Dissipation (Pd) at Tc = 25 C | β | 71 W |
| Package / Case | β | TO-252AA (DPAK) |
| Gate-Source Voltage (VGS) max | β | +/- 20 V |
| Number of Units in IC | β | 1 |
| Lead-Free / RoHS | β | Yes (PBF suffix, lead-free) |