IRFR120NTRLPBF vs IRFL014NTRPBF Comparison

Detailed side-by-side comparison of IRFR120NTRLPBF by Infineon and IRFL014NTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFR120NTRLPBF IRFL014NTRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.62 $0.30
FET Type N-Channel N-Channel MOSFET, Metal Oxide
Technology IR MOSFET (HEXFET) HEXFET (planar N-channel, fifth generation)
Drain-Source Voltage (VDS) 100 V β€”
Continuous Drain Current (ID) at TC=25C 9.4 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] β€”
On-Resistance RDS(on) max at VGS=10V 210 mΞ© β€”
Total Gate Charge (Qg) 16.7 nC β€”
Power Dissipation (PD) at TC=25C 48 W β€”
Operating Junction Temperature Range -55C to +175C β€”
Avalanche Energy Rated Yes (fully avalanche rated) β€”
Package PG-TO252-3 (DPAK) SOT-223 (TO-261-4), 4-pin (3 + tab)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant β€”
Lead-Free Finish Yes (Pb-free) β€”
Drain-to-Source Voltage (VDS) β€” 55 V
Continuous Drain Current (ID) at 25 C β€” 1.9 A
Continuous Drain Current (ID) at 70 C β€” [DATA_NEEDED: ID at 70 C]
Gate-to-Source Voltage (VGS) max β€” Β±20 V
RDS(on) max at VGS=10V β€” 160 milliohm
Gate Charge (Qg) typical β€” 7 nC
Threshold Voltage VGS(th) typical β€” [DATA_NEEDED: VGS(th)]
Power Dissipation (PD) at 25 C β€” 1.0 W (free air), up to 2.1 W with proper PCB copper
Operating Temperature Range β€” -55 C to +150 C (junction)
Avalanche Rated β€” Yes (fully avalanche rated)
dv/dt Rating β€” Yes (dynamic dv/dt rated)
Lead-Free / RoHS β€” Yes / Compliant
MSL Level β€” Level 1 (per JEDEC J-STD-020)

Datasheets & Resources

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