IRFR120NTRLPBF - 100V 9.4A N-Channel HEXFET MOSFET | Infineon
MPN: IRFR120NTRLPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.18 | $1.18 |
| 10 | $1.05 | $10.50 |
| 100 | $0.92 | $92.00 |
| 500 | $0.81 | $405.00 |
| 1,000 | $0.7 | $700.00 |
| 2,500 | $0.62 | $1,550.00 |
IRFR120NTRLPBF Overview
A power MOSFET is a voltage-controlled three-terminal semiconductor switch used to efficiently route or modulate current between its drain and source terminals under the control of a gate-source voltage. Power MOSFETs sit inside the wider category of discrete semiconductors and, in switching topologies, replace mechanical relays and bipolar transistors to deliver higher switching frequency, lower drive power and zero quiescent conduction loss. The IRFR120N family is part of Infineon's classic HEXFET planar-cell line, which became an industry reference for 100 V N-channel switching FETs.
Key differentiating features of the IRFR120NTRLPBF include fully avalanche-rated dynamic behavior, fast switching transitions enabled by low total gate charge of 16.7 nC, a low 210 mΩ on-resistance at full gate drive, and a ruggedized intrinsic body diode that withstands unclamped inductive switching events. The device is rated for operation from -55°C to +175°C junction temperature and is supplied in an RoHS-compliant lead-free PG-TO252-3 package on tape-and-reel.
Architecturally, the IRFR120N uses a vertical DMOS cell with a hex-fabricated gate geometry. This structure provides a low figure-of-merit for switching losses (RDS(on) × Qg) and gives the part its 100% avalanche-tested reliability. The PG-TO252-3 footprint is the de-facto industry standard for medium-power SMD MOSFETs, and the thermal pad on pin 2 carries the main drain current path to the PCB copper pour.
Typical applications for the IRFR120NTRLPBF include low-side switching in DC-DC converters, 24 V industrial relay and solenoid drivers, half-bridge stages in motor drivers, synchronous rectifier positions in non-isolated buck converters, and general-purpose load switching in 12 V/24 V automotive and industrial subsystems.
When designing with this part, pay attention to gate-drive voltage - the full 210 mΩ is only achieved with VGS=10 V; at logic-level drive (VGS=4.5 V) RDS(on) typically rises by 50% or more. Also keep in mind the device's continuous-current rating is referenced to TC=25°C; in a real PCB environment at TA=70°C the usable continuous drain current drops to roughly 4 A without a substantial copper thermal pour.
This page synthesizes distributor pricing for the Infineon IRFR120NTRLPBF, drop-in alternatives sourced from the manufacturer's same-part family and from cross-brand parametric cross-reference data, and practical design notes that are not present in the manufacturer datasheet alone.
Drop-in alternatives for IRFR120NTRLPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRFR120NTRLPBF (same form factor and footprint) — differing in Technology, Package, Drain-Source Voltage (VDS), RoHS Status, Gate Threshold Voltage (VGS(th)).
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRFR120NTRPBF
✅ Drop-In✓ In Stock
$0.26 / Unit
View Datasheet →IRFR120NTRRPBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRFR1205TRPBF
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.49 / Unit
View Datasheet →IRFR5305TRLPBF
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.38 / Unit
View Datasheet →VBE1102M
✅ Drop-In📋 Reference alternative (not in catalog)
IRFL014NTRPBF
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.3 / Unit
View Datasheet →IRFR120NTRLPBF Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Technology | IR MOSFET (HEXFET) |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at TC=25C | 9.4 A |
| On-Resistance RDS(on) max at VGS=10V | 210 mΩ |
| Total Gate Charge (Qg) | 16.7 nC |
| Power Dissipation (PD) at TC=25C | 48 W |
| Operating Junction Temperature Range | -55C to +175C |
| Avalanche Energy Rated | Yes (fully avalanche rated) |
| Package | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| Lead-Free Finish | Yes (Pb-free) |
IRFR120NTRLPBF Pin Configuration
| Pin 1 | Gate — Gate control input (MOSFET gate) |
| Pin 2 | Drain — Drain terminal (also thermal tab / copper pad connection) |
| Pin 3 | Source — Source terminal |
Safe Operating Area (DC, TC=25C)
Typical Applications
IRFR120NTRLPBF is suitable for 6 applications: 24V Industrial Solenoid and Relay Driver, Low-Side Switch in Non-Isolated Buck DC-DC Converters, Half-Bridge Stage for Small DC Motor Drivers, Automotive 12V/24V Load Switching, Synchronous Rectifier Position in Linear / Buck Regulators, Uninterruptible Power Supply (UPS) and Battery Protection.
24V Industrial Solenoid and Relay Driver
The IRFR120NTRLPBF is well suited as a low-side switch for 24 V industrial solenoid and relay coils, where its 100 V VDS rating provides nearly 4× transient headroom above the 24 V nominal rail and the 9.4 A continuous drain current can comfortably handle most industrial solenoid inrush currents. The fully avalanche-rated body diode withstands the flyback energy when the coil is de-energized, allowing designers to omit a separate freewheeling diode in many cases. Mounted in PG-TO252-3 with a copper thermal pad, it dissipates the steady-state coil current drop without an external heatsink.
Recommended
Low-Side Switch in Non-Isolated Buck DC-DC Converters
The IRFR120NTRLPBF works as the low-side synchronous or hard-switch FET in 12 V/24 V-input buck converters where its 16.7 nC total gate charge keeps gate-drive losses manageable at switching frequencies up to ~200 kHz. The 210 mΩ on-resistance at VGS=10 V delivers acceptable conduction loss for sub-5 A load designs, and the 100 V VDS rating absorbs the transient spikes seen on automotive 12 V and industrial 24 V input rails. Designers typically drive the gate from a 10 V bootstrap supply rather than a 5 V logic rail to realize the full RDS(on) specification.
Recommended
Half-Bridge Stage for Small DC Motor Drivers
In small brushed DC motor and BDC fan driver half-bridges, the IRFR120NTRLPBF provides a 100 V-rated switching pole that can survive the inductive flyback from motor windings at 12 V/24 V supply rails. The 9.4 A continuous drain current covers motors up to ~100 W mechanical output when properly heatsunk on a copper PCB pour, and the fully avalanche-rated body diode eliminates the need for external flyback diodes in most low-power motor designs. Pair it with an Infineon IFX007 or BTS3011 gate driver for a compact, robust driver solution.
Recommended
Automotive 12V/24V Load Switching
The IRFR120NTRLPBF is widely used as a generic load switch in 12 V and 24 V automotive subsystems where it directly controls lamps, fans, heaters and small motor loads. Its 100 V VDS rating handles load-dump transients up to ~40 V common in 12 V automotive electrical systems, and the -55°C to +175°C junction temperature range supports underhood and body-module operating environments. For AEC-Q100-qualified automotive designs the part may need to be paired with an automotive-grade companion in the system-level BOM even though the IRFR120NTRLPBF itself is a commercial-grade Infineon part.
Recommended
Synchronous Rectifier Position in Linear / Buck Regulators
In low-current synchronous buck and SEPIC regulators operating from 12 V or 24 V rails, the IRFR120NTRLPBF can be used in the synchronous rectifier position where its 100 V VDS rating is overkill but acceptable, and its 210 mΩ RDS(on) provides acceptable conduction loss for sub-3 A loads. The 16.7 nC Qg allows efficient switching up to ~200 kHz, and the fully avalanche-rated body diode simplifies dead-time management in the control loop. Designers trade off the higher RDS(on) against cost when the IRFR120NTRLPBF is selected in this role versus a lower-voltage specialized synchronous rectifier.
Recommended
Uninterruptible Power Supply (UPS) and Battery Protection
In low-power UPS modules and battery protection circuits, the IRFR120NTRLPBF serves as a reverse-polarity and over-current disconnect switch. The 100 V VDS rating handles the transients from lead-acid battery disconnect events and the 9.4 A continuous current supports most small UPS loads. The fully avalanche-rated body diode absorbs the inductive kick from upstream transformers and inductors during switching transitions, and the -55°C to +175°C junction temperature range is essential for battery-pack thermal management.
Recommended
Recommended Products Summary
Engineering reference data for IRFR120NTRLPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRFR120NTRPBF | IRFR120NTRRPBF | IRFR1205TRPBF | VBE1102M |
|---|---|---|---|---|---|
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same |
| Brand | Infineon | Infineon | Infineon | Infineon | VBsemi |
| Drain-Source Voltage (VDS) | 100 V | 100 V | 100 V | 55 V | 100 V |
| Channel Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
Key Differentiators
- Industry-standard 100V/9.4A DPAK with verified drop-in equivalents (vs IRFR120NTRPBF)
- Lower RDS(on) than legacy competitors in same package (vs VBE1102M)
- High 48 W power dissipation rating in PG-TO252-3 (vs IRFR1205TRPBF)
Design Notes
Estimated: At PD=10W continuous in PG-TO252-3 (theta_JA ~50 C/W on a 1-oz 1-square-inch copper pour), the junction temperature rise above ambient is roughly 50×10 = 500°C above ambient, which would exceed the 175°C rating. In practice this means the IRFR120NTRLPBF cannot continuously dissipate 10W without substantial thermal management. Use the largest practical drain-tab copper area and thermal vias to a bottom-side pour; in free air (no heatsink) limit steady-state dissipation to ~2 W.
Solder the drain tab (Pin 2) directly to a continuous copper pour on the top layer. This pad carries both the high drain current path AND the primary thermal path - a starved land pattern will both limit current handling and cause thermal runaway. Recommended minimum copper: 1 square inch of 2-oz copper, or equivalent thermal-via array to an internal plane. Route the gate trace away from the drain switching node to avoid dv/dt-induced false turn-on.
Do not drive the IRFR120NTRLPBF gate directly from a 3.3 V or 5 V microcontroller GPIO - the 210 mΩ RDS(on) spec assumes VGS=10 V. At VGS=4.5 V, RDS(on) typically rises to ~300 mΩ or higher, which can cause overheating at full load. Use a gate-driver IC (e.g., TC4427, IFX007TAUMA1) or a simple 10 V charge pump. Also avoid exceeding the VGS maximum rating (typically ±20 V) by clamping gate transients with a 12 V Zener if the gate is driven from a 24 V logic-level source.
Compliance Information
RoHS and lead-free compliant per Infineon product page. Not AEC-Q100 qualified - this is a commercial-grade part. For automotive designs requiring AEC-Q100, look at Infineon's automotive-grade HEXFET equivalents.
