IRFR120NTRLPBF vs IRFR1205TRPBF Comparison

Detailed side-by-side comparison of IRFR120NTRLPBF by Infineon and IRFR1205TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFR120NTRLPBF IRFR1205TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.62 $0.49
FET Type N-Channel N-Channel
Technology IR MOSFET (HEXFET) HEXFET (IR MOSFET, 5th generation)
Drain-Source Voltage (VDS) 100 V 55 V
Continuous Drain Current (ID) at TC=25C 9.4 A 44 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 160 A
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] +/- 20 V
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] 2 V min, 4 V max
On-Resistance RDS(on) max at VGS=10V 210 mΞ© β€”
Total Gate Charge (Qg) 16.7 nC 43.3 nC
Power Dissipation (PD) at TC=25C 48 W β€”
Operating Junction Temperature Range -55C to +175C β€”
Avalanche Energy Rated Yes (fully avalanche rated) β€”
Package PG-TO252-3 (DPAK) TO-252AA (DPAK)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant (PBF suffix = lead-free)
Lead-Free Finish Yes (Pb-free) β€”
On-Resistance RDS(on) at VGS=10V β€” 27 mOhm max
Power Dissition (PD) at TC=25C β€” 107 W
Operating Junction Temperature β€” -55C to +175C
Lead-Free / Halogen-Free β€” Yes / [DATA_NEEDED: halogen status]

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