IRFR120NTRLPBF vs IRFR5305TRLPBF Comparison

Detailed side-by-side comparison of IRFR120NTRLPBF by Infineon and IRFR5305TRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFR120NTRLPBF IRFR5305TRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.62 $0.38
FET Type N-Channel β€”
Technology IR MOSFET (HEXFET) HEXFET fifth-generation planar MOSFET
Drain-Source Voltage (VDS) 100 V -55 V
Continuous Drain Current (ID) at TC=25C 9.4 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] Β±20 V
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] [DATA_NEEDED: VGS(th) range]
On-Resistance RDS(on) max at VGS=10V 210 mΞ© β€”
Total Gate Charge (Qg) 16.7 nC β€”
Power Dissipation (PD) at TC=25C 48 W β€”
Operating Junction Temperature Range -55C to +175C β€”
Avalanche Energy Rated Yes (fully avalanche rated) β€”
Package PG-TO252-3 (DPAK) TO-252AA (DPAK), surface mount
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant β€”
Lead-Free Finish Yes (Pb-free) β€”
Polarity / Channel Type β€” P-Channel
Continuous Drain Current (ID) at Tc=25C β€” -31 A
RDS(on) max at VGS=-10V β€” 65 mΞ©
RDS(on) max at VGS=-5V β€” [DATA_NEEDED: RDS(on) at VGS=-5V]
Power Dissipation (PD) at Tc=25C β€” 110 W
Operating Junction Temperature β€” -55C to +175C
Avalanche Rated β€” Yes (fully avalanche rated)
Lead-Free / RoHS β€” Yes (Pb-free, suffix "PBF")
Tape & Reel Orientation β€” Left orientation (TRLPBF = Tape & Reel, Left)

Datasheets & Resources

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