IRFR2405TRLPBF vs IRFR3607TRPBF Comparison

Detailed side-by-side comparison of IRFR2405TRLPBF by Infineon and IRFR3607TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFR2405TRLPBF IRFR2405TRLPBF - 55V 56A N-Ch HEXFET MOSFET DPAK | Infineon

IRFR2405TRLPBF - 55V 56A N-Ch HEXFET MOSFET DPAK | Infineon

IRFR2405TRLPBF βœ“ Active

Specification Comparison

Parameter IRFR2405TRLPBF IRFR3607TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.55 $0.39
Transistor Type N-Channel MOSFET β€”
Technology HEXFET (IR MOSFET, 7th generation) IR HEXFET (planar DMOS)
Drain-Source Voltage (VDS) 55 V β€”
Continuous Drain Current (ID) at Tc 56 A β€”
Pulsed Drain Current (IDM) 200 A (typical, per datasheet family) β€”
On-Resistance RDS(on) max @ VGS=10V 16 mOhm β€”
Gate Charge (Qg) typical 70 nC β€”
Power Dissipation (PD) at Tc 110 W β€”
Gate-Source Voltage (VGS) max Β±20 V β€”
Operating Temperature Range -55 C to +175 C (junction) -55C to +175C (TJ max 175C per datasheet convention)
Package TO-252AA (DPAK), 3-pin (2 + Tab) TO-252AA (DPAK)
Mounting Type Surface Mount Surface Mount
Avalanche Energy Rated Yes (HEXFET ruggedized design) β€”
Lead-Free / RoHS Yes, PBF suffix indicates lead-free and RoHS compliant β€”
Packaging Tape & Reel (TR) β€”
Polarity / Channel Type β€” N-Channel
Drain-to-Source Voltage (VDS) β€” 75 V
Continuous Drain Current (ID, Tc) β€” 56 A
Calculated Die Drain Current β€” 80 A
On-State Resistance (RDS(on)) β€” 9 mOhm @ VGS=10V, ID=46A
Gate Threshold Voltage (VGS(th)) β€” 4 V
Total Gate Charge (Qg) β€” 56 nC
Gate-to-Source Voltage (VGS) Max β€” +/-20 V
Power Dissipation (PD, Tc) β€” 140 W
Thermal Resistance (RthJC) β€” 1.0 C/W
Avalanche SOA β€” Fully characterized
RoHS / Lead-Free β€” Compliant / Pb-free (PBF suffix, JESD-609 e3)

Datasheets & Resources

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