IRFR3607TRPBF - 75V 56A N-Channel MOSFET | Infineon | DPAK
MPN: IRFR3607TRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.26 | $2.26 |
| 10 | $1.98 | $19.80 |
| 100 | $1.49 | $149.00 |
| 500 | $1.02 | $510.00 |
| 1,000 | $0.68 | $680.00 |
| 3,000 | $0.3 | $900.00 |
Drop-in alternatives for IRFR3607TRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRFR3607PBF
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
IRLR2905TRPBF
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
IRFR120NTRPBF
β‘ Same Package β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
IRLR024NTRPBF
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NTD5867N
β‘ Same Package β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
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IRFR3607TRPBF Maximum Ratings & Electrical Characteristics
| Polarity | N-Channel |
| Drain-Source Breakdown Voltage (VDSS) | 75 V |
| Continuous Drain Current (ID, calculated at Tc) | 80 A |
| Continuous Drain Current (bond wire limit) | 56 A |
| Drain-Source On-State Resistance (RDS(on)) | 9 mOhm at VGS=10V, ID=46A |
| Total Gate Charge (Qg) | 56 nC |
| Gate-Source Voltage Range (VGS) | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | 4 V |
| Power Dissipation (PD) | 140 W (Tc) |
| Thermal Resistance (RthetaJC) | 1.0 C/W |
| Package | TO-252AA (DPAK), Surface Mount |
| Mounting Type | Surface Mount |
| Technology | HEXFET Power MOSFET |
| Avalanche Capability | Fully characterized avalanche SOA |
| JESD-609 Code | e3 |
| RoHS Status | Compliant (Pb-free suffix PBF) |
| Configuration | Single with built-in body diode |
IRFR3607TRPBF Pin Configuration
| Pin 1 | Gate (G) β Gate control terminal |
| Pin 3 | Source (S) β Source terminal |
| Pin Tab | Drain (D) β Drain connected to exposed metal tab (case connection) |
Safe Operating Area (TO-252AA, Tc=25C)
Typical Applications
IRFR3607TRPBF is suitable for 6 applications: Synchronous Rectification in SMPS, High-Current DC-DC Converters, Motor Control and Driver Stages, Battery Management and Protection, Server and Telecom Power Supplies, Automotive and Industrial Load Switches.
Synchronous Rectification in SMPS
The IRFR3607TRPBF is explicitly optimized for high-efficiency synchronous rectification in SMPS, per the Infineon datasheet. Its 9 mOhm on-resistance at VGS=10V cuts conduction loss to roughly 19W at 46A, far below a Schottky diode at this current, directly improving converter efficiency in server and telecom power supplies. Placed as the low-side rectifier MOSFET driven by a dedicated controller output at 10-12V, the 56 nC gate charge keeps switching losses manageable up to hundreds of kHz. Ensure adequate gate-drive sink current and a low-inductance loop between transformer, MOSFET, and output capacitors.
Recommended
High-Current DC-DC Converters
In buck and boost converters handling tens of amps, the IRFR3607TRPBF serves as either control or synchronous FET. The 75V VDSS provides margin for 24V and 48V industrial buses with inductive spikes, while 140W dissipation capability with proper cooling tolerates hard-switching events. Its fully characterized avalanche SOA absorbs leakage-inductance energy without external snubbers in many designs. Use a controller such as the LM5117 with an integrated driver; keep the drain tab copper pour large to limit RthetaJA, and verify the 56A bond-wire limit rather than the 80A calculated rating when sizing continuous current.
Recommended
Motor Control and Driver Stages
For brushed DC and BLDC motor drives in industrial equipment, the IRFR3607TRPBF switches phase legs with 75V blocking capability and low 9 mOhm conduction resistance. Its avalanche energy rating provides robustness against inductive kickback from motor windings during PWM chopping, and the 56 nC Qg permits PWM frequencies up to the tens of kHz range with standard gate drivers. Pair with an isolated or half-bridge gate driver such as the UCC21520Q-Q1; implement shoot-through protection with appropriate dead time, and add a large source pin kelvin connection to minimize di/dt-induced gate ringing.
Recommended
Battery Management and Protection
In battery pack protection and load-switch circuits for 48V-class systems, the IRFR3607TRPBF provides 75V blocking and very low on-resistance so that discharge current causes minimal voltage drop and heat: at 40A, conduction loss is only about 14W at VGS=10V. Its built-in body diode conducts during transient polarity events, and the characterized avalanche SOA handles inductive fault energy. Typically two MOSFETs are placed back-to-back for charge/discharge control driven by a battery-protection IC or hot-swap controller; verify the +/-20V VGS limit when using higher-voltage gate drivers via level shifting.
Recommended
Server and Telecom Power Supplies
Server PSUs and telecom rectifiers running from 48V or 24V buses rely on the IRFR3607TRPBF in primary-side and rectification stages. The 75V rating covers 48V rails with transient margin, and the low RDS(on) supports the high continuous currents (40-56A) of ORing switches and hot-swap paths while keeping thermal budgets achievable in confined enclosures. Fully characterized capacitance values simplify loss prediction at the 100 kHz-plus switching frequencies common in these supplies. For hot-swap duty, check power-limit behavior during startup and pair with a hot-swap controller for current limiting and foldback.
Recommended
Automotive and Industrial Load Switches
The IRFR3607TRPBF works as a high-side or low-side load switch for industrial actuators, heaters, and solenoids supplied from 12V or 24V rails, with 75V rating absorbing load-dump-like transients when combined with TVS protection. The low 9 mOhm on-resistance minimizes drop across the switch at 20-40A loads, and the DPAK tab bonds directly to an aluminum-backed PCB or heat spreader for reliable heat extraction. Drive the gate through a small gate resistor (5-20 Ohm) from a level-shifting driver; account for the 4V typical threshold and specify 10V drive for full enhancement.
Recommended
Recommended Products Summary
Engineering reference data for IRFR3607TRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRFR3607PBF | IRLR2905TRPBF | IRFR120NTRPBF | NTD5867N |
|---|---|---|---|---|---|
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same |
| Brand | Infineon | Infineon | Infineon | Infineon | onsemi |
| VDS (max) | 75 V | 75 V | 55 V | 100 V | 60 V |
| RDS(on) max | 9 mOhm at 10V | 9 mOhm | 9 mOhm | 100 mOhm | [DATA_NEEDED] |
| Continuous Current | 56 A (bond wire) / 80 A (calculated) | 56 A / 80 A | 42 A | 5.4 A | [DATA_NEEDED] |
| Total Gate Charge | 56 nC | 56 nC | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Gate Drive | Standard (10V), VGS max +/-20V | Standard (10V) | Logic-level (5V capable) | Standard (10V) | [DATA_NEEDED] |
| Power Dissipation | 140 W (Tc) | 140 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Price (1 pc, as of 2026-08-29) | $0.29-$2.26 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Very low 9 mOhm on-resistance at 75V class (vs IRFR120NTRPBF)
- Highest voltage rating in the DPAK comparison set (vs IRLR2905TRPBF)
- 56A bond-wire current limit in a compact DPAK (vs NTD5867N)
Design Notes
At high continuous currents, the DPAK case-to-ambient resistance is dominated by PCB copper, not the 1.0 C/W junction-to-case figure. At 46A with 9 mOhm RDS(on), conduction loss is about 19W; design at least 1-2 square inches of copper on the drain tab (the drain is the tab) and use thermal vias to inner planes or an aluminum substrate to keep junction temperature below 150C per the Infineon datasheet.
Minimize the gate-drive loop and the power commutation loop. Place the gate driver close to pin 1, use a dedicated source kelvin return rather than sharing the high-current source trace, and keep the transformer/load-to-drain-tab connection short and wide. High di/dt in a long source inductance causes gate-source ringing that can exceed the +/-20V VGS limit during fast turn-off.
The 80A rating is a calculated value at maximum junction temperature; the datasheet states the bond wire current limit is 56A, and lead heating may further limit current depending on mounting. Do not design continuous currents above 56A. Also note the 4V threshold is a spec point, not a valid drive voltage - use 10V gate drive to achieve the 9 mOhm on-resistance.
Fast HEXFET switching with high di/dt can generate significant conducted and radiated EMI. Add a 5-20 Ohm gate resistor to tune switching speed, place a small RC snubber across drain-source when ringing is excessive, and follow standard SMPS layout practice with compact power loops and ground planes to pass CISPR-style emissions testing.
Compliance Information
PBF suffix indicates Pb-free; JESD-609 code e3 (lead-free terminal plating) per distributor part data. REACH and halogen-free status not stated in provided data.
