IRFR3710ZTRPBF vs IRFR3411TRPBF Comparison
Detailed side-by-side comparison of IRFR3710ZTRPBF by Infineon and IRFR3411TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFR3710ZTRPBF | IRFR3411TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.42 | $0.55 |
| FET Type | N-Channel | MOSFET (Metal Oxide) |
| Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) at TC=25C | 56 A | β |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM] | β |
| Gate-Source Voltage (VGS) | Β±20 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | β |
| Static Drain-Source On-Resistance RDS(on) max at VGS=10V | 18 mOhm | β |
| Power Dissipation (PD) at TC=25C | 140 W | β |
| Operating Junction Temperature | -55C to +175C | β |
| Technology | HEXFET (IR MOSFET) | HEXFET Power MOSFET (IR) |
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | β |
| Lead-Free | Yes | β |
| Polarity | β | N-Channel |
| V(BR)DSS (Drain-Source Breakdown Voltage) | β | 100 V |
| RDS(on) max @ VGS=10V | β | 44 mOhm |
| Continuous Drain Current (Id) @ Tc | β | 32 A |
| Pulsed Drain Current (Idm) | β | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (Pd) @ Tc | β | 130 W |
| Gate Charge (Qg) | β | 48 nC |
| Operating Mode | β | Enhancement |
| Maximum Junction Temperature | β | 175 C |
| Operating Temperature Range | β | -55 C to +175 C |
| Number of Pins | β | 3 |
| Avalanche Rated | β | Yes (fully avalanche rated) |
| dv/dt Rating | β | Dynamic dv/dt rated |
| Lead-Free / RoHS | β | Yes (Lead-free, PBF suffix) |