IRFR3710ZTRPBF vs IRLR3410TRPBF Comparison

Detailed side-by-side comparison of IRFR3710ZTRPBF by Infineon and IRLR3410TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFR3710ZTRPBF IRFR3710ZTRPBF - 100V N-Channel 56A HEXFET MOSFET | Infineon

IRFR3710ZTRPBF - 100V N-Channel 56A HEXFET MOSFET | Infineon

IRFR3710ZTRPBF βœ“ Active

Specification Comparison

Parameter IRFR3710ZTRPBF IRLR3410TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.42 $0.81
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 100 V β€”
Continuous Drain Current (ID) at TC=25C 56 A β€”
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM] β€”
Gate-Source Voltage (VGS) Β±20 V β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] β€”
Static Drain-Source On-Resistance RDS(on) max at VGS=10V 18 mOhm β€”
Power Dissipation (PD) at TC=25C 140 W β€”
Operating Junction Temperature -55C to +175C β€”
Technology HEXFET (IR MOSFET) HEXFET (IR MOSFET, 5th generation)
Package TO-252AA (DPAK) TO-252AA (DPAK), surface mount
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant β€”
Lead-Free Yes β€”
Drain-Source Voltage (Vdss) β€” 100 V
Continuous Drain Current (Id) at Tc=25C β€” 17 A
Power Dissipation (Pd) at Tc=25C β€” 79 W
On-Resistance RDS(on) max β€” 105 mOhm
Gate Threshold Voltage Vgs(th) β€” Logic-level (drive ~4.5V)
Total Gate Charge (Qg) β€” 22.7 nC
Operating Temperature Range β€” -55C to +175C (junction)
Lead-Free / RoHS β€” Yes (PBF suffix)
MSL Level β€” 1 (unlimited floor life at <30C/85% RH)
Drain Tab Connection β€” Tab electrically tied to Drain
Polarity β€” N-Channel enhancement mode

Datasheets & Resources

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