IRFR3710ZTRPBF vs IRLU024NPBF Comparison
Detailed side-by-side comparison of IRFR3710ZTRPBF by Infineon and IRLU024NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRLU024NPBF
IRLU024NPBF - 55V 17A N-Channel HEXFET MOSFET | Infineon
IRLU024NPBF β ActiveSpecification Comparison
| Parameter | IRFR3710ZTRPBF | IRLU024NPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.42 | $0.61 |
| FET Type | N-Channel | N-Channel, Logic-Level |
| Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) at TC=25C | 56 A | 17 A |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM] | [DATA_NEEDED: IDM] |
| Gate-Source Voltage (VGS) | Β±20 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | β |
| Static Drain-Source On-Resistance RDS(on) max at VGS=10V | 18 mOhm | β |
| Power Dissipation (PD) at TC=25C | 140 W | 45 W |
| Operating Junction Temperature | -55C to +175C | -55C to +175C |
| Technology | HEXFET (IR MOSFET) | HEXFET Power MOSFET (5th generation) |
| Package | TO-252AA (DPAK) | IPAK (TO-251AA), Through Hole |
| Mounting Type | Surface Mount | Through Hole |
| RoHS Status | Compliant | β |
| Lead-Free | Yes | β |
| Manufacturer | β | Infineon Technologies (formerly International Rectifier) |
| Part Number | β | IRLU024NPBF |
| Drain-to-Source Voltage (VDS) | β | 55 V |
| On-Resistance RDS(on) max at VGS=10V | β | 65 mOhm |
| On-Resistance RDS(on) max at VGS=5V | β | [DATA_NEEDED: RDS(on) at VGS=5V] |
| Gate Threshold Voltage VGS(th) | β | [DATA_NEEDED: VGS(th) min/typ/max] |
| Total Gate Charge (Qg) | β | 10 nC (typical, per listing) |
| Thermal Resistance Junction-to-Case (RthJC) | β | 3.3 C/W |
| Thermal Resistance Junction-to-Ambient (RthJA) | β | 110 C/W (50 C/W PCB-mounted) |
| Lead-Free / RoHS | β | Yes (PBF suffix indicates lead-free plating) |
| Qualification | β | JEDEC standard |
| Gate Drive Voltage (optimized) | β | 10 V (capable of 4.5 V) |