IRFR3806TRPBF vs IRFH8318TRPBF Comparison

Detailed side-by-side comparison of IRFR3806TRPBF by Infineon and IRFH8318TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFH8318TRPBF IRFH8318TRPBF - 30V N-Ch StrongIRFET, 3.1mΞ© | Infineon

IRFH8318TRPBF - 30V N-Ch StrongIRFET, 3.1mΞ© | Infineon

IRFH8318TRPBF βœ“ Active

Specification Comparison

Parameter IRFR3806TRPBF IRFH8318TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.52 $0.48
Transistor Polarity N-Channel β€”
MOSFET Operating Mode Enhancement β€”
Drain-Source Voltage (VDS) 60 V 30 V
Continuous Drain Current (ID) at Tc 43 A β€”
On-State Resistance RDS(on) max 15.8 mOhm at VGS = 10 V β€”
Total Gate Charge (Qg) 22 nC 41 nC
Power Dissipation (Pd) at Tc = 25 C 71 W β€”
Package / Case TO-252AA (DPAK) β€”
Mounting Type Surface Mount Surface Mount
Technology HEXFET (IR MOSFET) StrongIRFETβ„’ (N-Channel Trench MOSFET)
Operating Temperature Range -55 C to +175 C β€”
Gate-Source Voltage (VGS) max +/- 20 V β€”
Number of Units in IC 1 β€”
Lead-Free / RoHS Yes (PBF suffix, lead-free) β€”
Avalanche Rated Yes (HEXFET family) β€”
Manufacturer β€” Infineon Technologies
Part Number β€” IRFH8318TRPBF
Continuous Drain Current (ID) at Ta=25Β°C β€” 27 A
Continuous Drain Current (ID) at Tc=25Β°C β€” 120 A
On-Resistance RDS(on) max at VGS=10V β€” 3.1 mΞ©
Power Dissipation (Ta) β€” 3.6 W
Power Dissipation (Tc) β€” 59 W
Package β€” PQFN 5x6 (SuperSO8, 8-PowerTDFN)
Operating Temperature β€” -55Β°C to +150Β°C
RoHS Status β€” Compliant
Lead-Free β€” Yes
MSL Level β€” 1
Description β€” Synchronous MOSFET for high-frequency buck converters

Datasheets & Resources

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