IRFR3806TRPBF vs IRFR5305TRPBF Comparison
Detailed side-by-side comparison of IRFR3806TRPBF by Infineon and IRFR5305TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFR3806TRPBF | IRFR5305TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.52 | $0.32 |
| Transistor Polarity | N-Channel | β |
| MOSFET Operating Mode | Enhancement | β |
| Drain-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) at Tc | 43 A | β |
| On-State Resistance RDS(on) max | 15.8 mOhm at VGS = 10 V | β |
| Total Gate Charge (Qg) | 22 nC | β |
| Power Dissipation (Pd) at Tc = 25 C | 71 W | β |
| Package / Case | TO-252AA (DPAK) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | HEXFET (IR MOSFET) | HEXFET (IR MOSFET) |
| Operating Temperature Range | -55 C to +175 C | -55 C to +175 C |
| Gate-Source Voltage (VGS) max | +/- 20 V | β |
| Number of Units in IC | 1 | β |
| Lead-Free / RoHS | Yes (PBF suffix, lead-free) | β |
| Avalanche Rated | Yes (HEXFET family) | β |
| Polarity | β | P-Channel |
| Drain-Source Voltage (VDS) Max | β | -55 V |
| Continuous Drain Current (ID) at TC=25C | β | 31 A |
| Continuous Drain Current (ID) at TC=100C | β | [DATA_NEEDED: ID at TC=100C] |
| On-Resistance (RDS(on)) Max at VGS=-10V | β | 65 mOhm |
| Gate-Source Threshold Voltage (VGS(th)) | β | -2 V to -4 V |
| Gate Charge (Qg) Typ | β | [DATA_NEEDED: Qg typ] |
| Power Dissipation (PD) at TC=25C | β | 110 W |
| Single-Pulse Avalanche Energy (EAS) | β | 270 mJ |
| Package | β | TO-252AA (DPAK) |
| MSL Level | β | 1 |
| RoHS Status | β | Compliant (Pb-free PBF suffix) |
| Lead-Free Finish | β | Yes (PBF suffix) |