IRFR5305TRLPBF vs IRFR9120NTRLPBF Comparison

Detailed side-by-side comparison of IRFR5305TRLPBF by Infineon and IRFR9120NTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFR5305TRLPBF IRFR9120NTRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.38 $0.61
Polarity / Channel Type P-Channel β€”
Drain-Source Voltage (VDS) -55 V -100 V
Continuous Drain Current (ID) at Tc=25C -31 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max Β±20 V β€”
RDS(on) max at VGS=-10V 65 mΞ© β€”
RDS(on) max at VGS=-5V [DATA_NEEDED: RDS(on) at VGS=-5V] β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) range] -2 V to -4 V
Power Dissipation (PD) at Tc=25C 110 W β€”
Operating Junction Temperature -55C to +175C β€”
Package TO-252AA (DPAK), surface mount TO-252AA (DPAK)
Mounting Type Surface Mount Surface Mount
Technology HEXFET fifth-generation planar MOSFET IR MOSFET (planar)
Avalanche Rated Yes (fully avalanche rated) β€”
Lead-Free / RoHS Yes (Pb-free, suffix "PBF") β€”
Tape & Reel Orientation Left orientation (TRLPBF = Tape & Reel, Left) β€”
Transistor Polarity β€” P-Channel
Continuous Drain Current (ID) β€” -6.6 A (Tc)
Gate-Source Voltage (VGS) β€” Β±20 V
On-Resistance (RDS(on)) β€” 480 mOhm max @ VGS = -10 V
Gate Charge (Qg) β€” 18 nC (typ)
Power Dissipation (PD) β€” 40 W (Tc)
Operating Temperature Range β€” -55C to +150C (Tj)
Pin Count β€” 3 (Gate, Drain, Source)
MSL Level β€” 1
RoHS Status β€” Compliant (Pb-free)
Lead-Free β€” Yes

Datasheets & Resources

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