IRFR5305TRPBF vs IRF8736TRPBF Comparison

Detailed side-by-side comparison of IRFR5305TRPBF by Infineon and IRF8736TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFR5305TRPBF IRFR5305TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR5305TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR5305TRPBF βœ“ Active

Specification Comparison

Parameter IRFR5305TRPBF IRF8736TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.32 $0.27
Polarity P-Channel β€”
Drain-Source Voltage (VDS) Max -55 V 30 V
Continuous Drain Current (ID) at TC=25C 31 A β€”
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] β€”
On-Resistance (RDS(on)) Max at VGS=-10V 65 mOhm β€”
Gate-Source Threshold Voltage (VGS(th)) -2 V to -4 V [DATA_NEEDED: VGS(th) typical value]
Gate Charge (Qg) Typ [DATA_NEEDED: Qg typ] β€”
Power Dissipation (PD) at TC=25C 110 W β€”
Single-Pulse Avalanche Energy (EAS) 270 mJ β€”
Operating Temperature Range -55 C to +175 C -55C to +150C (junction)
Package TO-252AA (DPAK) SO-8 (8-SO, MS-012AA)
Mounting Type Surface Mount Surface Mount
Technology HEXFET (IR MOSFET) StrongIRFET / HEXFET
MSL Level 1 1 (per JEDEC J-STD-020)
RoHS Status Compliant (Pb-free PBF suffix) β€”
Lead-Free Finish Yes (PBF suffix) β€”
FET Type β€” N-Channel
Continuous Drain Current (ID) at TA=25C β€” 18 A
Power Dissipation (PD) Max at TA=25C β€” 2.5 W
Drain-Source On-Resistance (RDS(on)) Max β€” 4.8 mOhm at VGS = 10V
Gate Charge (Qg) Typical β€” 17 nC
Lead-Free / RoHS β€” Yes (PBF suffix = lead-free, RoHS compliant)
Avalanche Rated β€” Yes (fully characterized avalanche voltage)
Configuration β€” Single
Packaging β€” Tape & Reel (TRPBF suffix)

Datasheets & Resources

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