IRFR5505TRLPBF vs IRFR024NTRPBF Comparison

Detailed side-by-side comparison of IRFR5505TRLPBF by Infineon and IRFR024NTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFR5505TRLPBF IRFR024NTRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.38 $0.31
Polarity P-Channel
MOSFET Operating Mode Enhancement
VDS (Drain-Source Voltage) -55 V
VGS (Gate-Source Voltage) [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) -18 A (Tc) 17 A (at TC = 25 C)
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] 60 A
On-Resistance RDS(on) max 110 mOhm (VGS = -10 V)
Total Gate Charge (Qg) 21.3 nC
Power Dissipation (PD) 57 W (Tc = 25 °C)
Operating Temperature Range -55 °C to +175 °C
Thermal Resistance Junction-to-Case (RθJC) [DATA_NEEDED: RθJC]
Technology IR MOSFET™ (HEXFET® generation 5)
Package TO-252AA (DPAK), surface mount TO-252-3 (DPAK, SC-63), surface mount
Mounting Type Surface Mount Surface Mount
Lead-Free / RoHS Yes (PBF suffix)
MSL Level 1 1 (per JEDEC J-STD-020)
Manufacturer Infineon Technologies (formerly International Rectifier)
Product Series HEXFET Power MOSFET (5th generation)
Transistor Type N-Channel MOSFET
Maximum Drain-Source Voltage (VDS) 55 V
On-Resistance (RDS(on)) 75 mOhm max (at VGS = 10 V)
Gate-Source Threshold Voltage (VGS(th)) 2.0 V to 4.0 V
Typical Gate Charge (Qg) 13.3 nC
Total Power Dissipation (PD) 45 W (at TC = 25 C)
Operating Junction Temperature -55 C to +175 C
Packaging Tape and Reel (TR)
RoHS Compliance Compliant (Pb-free / PbF terminations)

Datasheets & Resources

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