IRFR024NTRPBF - 55V 17A N-Channel HEXFET MOSFET | Infineon
MPN: IRFR024NTRPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.95 | $0.95 |
| 10 | $0.78 | $7.80 |
| 100 | $0.58 | $58.00 |
| 500 | $0.46 | $230.00 |
| 1,000 | $0.39 | $390.00 |
| 3,000 | $0.31 | $930.00 |
IRFR024NTRPBF Overview
A power MOSFET is a voltage-controlled semiconductor switch used to efficiently switch or amplify power in electronic circuits. The IRFR024NTRPBF belongs to the broader N-channel enhancement-mode MOSFET family, which sits within the discrete semiconductor power-switch hierarchy (MOSFET -> transistor -> discrete semiconductor). It is specifically engineered for low- to medium-frequency switching, where its low gate charge (Qg = 13.3 nC typical) and 55 V drain-source rating suit DC-DC conversion, motor drive, and relay-replacement functions in non-automotive industrial and consumer systems.
Key specifications include a maximum drain-source voltage (VDS) of 55 V, continuous drain current (ID) of 17 A at TC = 25 C, pulsed drain current of 60 A, maximum on-resistance of 75 mOhm at VGS = 10 V, gate threshold voltage (VGS(th)) of 2.0 V to 4.0 V, and a maximum junction temperature of 175 C. The DPAK surface-mount package has a junction-to-ambient thermal resistance (theta_JA) of approximately 50 C/W on a standard JEDEC 1-square-inch pad, with a junction-to-case rating (theta_JC) of 3.3 C/W enabling direct PCB heat-sinking via the drain tab.
Typical applications include DC-DC buck/boost converters, low-voltage motor drivers, solenoid and relay drivers, LED backlight switching, battery protection circuits in 12 V lead-acid systems, and general-purpose power switches in industrial and consumer equipment. The 55 V rating provides sufficient margin above the 24 V industrial bus and 12 V automotive transient environment for many systems, though for harsh load-dump environments a 60 V or 100 V part is preferred.
When designing with this part, calculate worst-case power dissipation as PD = ID^2 x RDS(on) x (1 + TJ derating factor) and verify that the resulting junction temperature stays below the 175 C maximum. The exposed drain tab doubles as both pin 2 (electrical) and a thermal pad; a sufficiently large copper pour (>= 1 sq inch) is critical to achieving the rated continuous current without thermal limiting.
This page synthesizes distributor pricing, parametric cross-reference data, and practical PCB-layout guidance beyond what appears in the manufacturer datasheet, helping procurement engineers and design engineers evaluate the IRFR024NTRPBF alongside true drop-in alternatives in the DPAK footprint.
Drop-in alternatives for IRFR024NTRPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRFR024NTRPBF (same form factor and footprint) — differing in Package, Technology, Total Gate Charge (Qg), FET Type, MSL Level.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRFR024N
✅ Drop-In📋 Reference alternative (not in catalog)
IRFRL024N
✅ Drop-In📋 Reference alternative (not in catalog)
NTD3055-094
✅ Drop-In📋 Reference alternative (not in catalog)
SUD50N05-25L-E3
✅ Drop-In📋 Reference alternative (not in catalog)
NVD5865NLT4G
✅ Drop-In📋 Reference alternative (not in catalog)
IRFR024NTRPBF Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies (formerly International Rectifier) |
| Product Series | HEXFET Power MOSFET (5th generation) |
| Transistor Type | N-Channel MOSFET |
| Maximum Drain-Source Voltage (VDS) | 55 V |
| Continuous Drain Current (ID) | 17 A (at TC = 25 C) |
| Pulsed Drain Current (IDM) | 60 A |
| On-Resistance (RDS(on)) | 75 mOhm max (at VGS = 10 V) |
| Gate-Source Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V |
| Typical Gate Charge (Qg) | 13.3 nC |
| Total Power Dissipation (PD) | 45 W (at TC = 25 C) |
| Operating Junction Temperature | -55 C to +175 C |
| Package | TO-252-3 (DPAK, SC-63), surface mount |
| Mounting Type | Surface Mount |
| Packaging | Tape and Reel (TR) |
| RoHS Compliance | Compliant (Pb-free / PbF terminations) |
| MSL Level | 1 (per JEDEC J-STD-020) |
IRFR024NTRPBF Pin Configuration
| Pin 1 | Gate — Gate control input; drive with 10V for full enhancement |
| Pin 2 | Drain — Drain terminal; electrically and thermally connected to the exposed tab |
| Pin 3 | Source — Source terminal; reference for gate drive |
Safe Operating Area (DC, TJ = 175 C)
Typical Applications
IRFR024NTRPBF is suitable for 6 applications: 12 V / 24 V Industrial DC-DC Buck Converter, Solenoid and Relay Driver, DC Motor Speed Control (PWM), LED Lighting and Backlight Driver, Battery Protection and Load Switching, Power OR-ing and Reverse Polarity Protection.
12 V / 24 V Industrial DC-DC Buck Converter
The IRFR024NTRPBF is well suited for the low-side switch position in non-isolated buck converters running from 24 V industrial rails down to 12 V or 5 V logic rails. Its 55 V VDS rating provides 30 V of headroom above the maximum 24 V nominal bus, comfortably absorbing inductive ringing and transient overshoots. The 75 mOhm RDS(on) at 10 V VGS keeps conduction losses moderate, and the 13.3 nC typical gate charge enables switching frequencies up to 100 kHz with reasonable driver losses. In a typical 24 V-to-5 V/5 A buck stage the MOSFET dissipates approximately 1.9 W continuous, well within DPAK capability when mounted on >= 1 square inch of copper pour.
Recommended
Solenoid and Relay Driver
The IRFR024NTRPBF excels as a low-side switch for 12 V or 24 V solenoid and relay coils in industrial automation panels. Its 17 A continuous rating easily handles inrush current of typical 12 V relays (200-500 mA holding, 1-2 A inrush), and the 60 A pulsed rating covers the brief 10-50 ms inrush of larger contactors. The 75 mOhm RDS(on) keeps the saturation drop under 200 mV at 2 A, preserving coil voltage. Fast switching (typ tr/tf < 50 ns at 10 V drive) reduces dissipation during PWM-based proportional control of hydraulic or pneumatic solenoid valves.
Recommended
DC Motor Speed Control (PWM)
For brushed DC motors up to 10 A continuous in 12 V or 24 V systems, the IRFR024NTRPBF serves as the low-side PWM switch in an H-bridge or half-bridge configuration. At 25 kHz PWM, switching losses are dominated by the 13.3 nC gate charge rather than crossover losses, allowing the part to run acceptably cool at 5 A continuous with modest copper pour. Its 55 V VDS withstands the back-EMF spikes generated by motor inductance during commutation, eliminating the need for an external flyback clamp in many 12 V applications.
Recommended
LED Lighting and Backlight Driver
The IRFR024NTRPBF functions as a low-side current sink for high-brightness LED strings in architectural and signage lighting. Its 55 V VDS supports long LED chains (up to 15-18 white LEDs in series at 12-24 V input), and the 75 mOhm RDS(on) maintains regulation accuracy when PWM-dimming at 200 Hz-1 kHz. In a typical 24 V-to-350 mA LED driver stage the MOSFET dissipates under 1 W, requiring only a standard DPAK footprint. The PbF terminations make the part RoHS-compliant for consumer-facing lighting products.
Recommended
Battery Protection and Load Switching
In 12 V lead-acid battery backup systems and UPS modules, the IRFR024NTRPBF is used as the load-disconnect switch. Its 17 A rating covers typical telecom and security panel loads, and the 55 V VDS handles the 15 V float-charge transients plus inductive ringing from relay coils on the load side. The standard-threshold VGS(th) of 2.0-4.0 V prevents accidental turn-on from leakage on the gate during battery float conditions. For higher-side (P-channel) disconnect requirements, consider the IRFR5505 (P-channel complementary part).
Recommended
Power OR-ing and Reverse Polarity Protection
The IRFR024NTRPBF wired in reverse across the input rail acts as a discrete reverse-polarity protection device, blocking fault current within microseconds of a reversed battery connection. With 55 V breakdown it tolerates 24 V transient spikes, and its 75 mOhm RDS(on) keeps the forward drop under 1.5 V at 20 A (above continuous rating, so use within SOA). This topology is widely used in industrial control cabinets and telecom equipment where a wiring mistake would otherwise destroy downstream components.
Recommended
Recommended Products Summary
Engineering reference data for IRFR024NTRPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRFR024N | IRFRL024N | NTD3055-094 | SUD50N05-25L-E3 | NVD5865NLT4G |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | onsemi | Vishay Intertechnology | onsemi |
| Package | TO-252-3 (DPAK) | TO-252-3 (DPAK) | TO-252-3 (DPAK) | TO-252-3 (DPAK) | TO-252-3 (DPAK) | TO-252-3 (DPAK) |
| VDS Max (V) | 55 V | 55 V | 55 V | 60 V | 55 V | 60 V |
| Continuous ID (A) | 17 A | 17 A | 17 A | 12 A | 50 A | 42 A |
| RDS(on) Max (mOhm) | 75 mOhm | 75 mOhm | 75 mOhm | 94 mOhm | 25 mOhm | 22 mOhm |
| VGS(th) (V) | 2.0 - 4.0 V | 2.0 - 4.0 V | 2.0 - 4.0 V | 2.0 - 4.0 V | 1.0 - 2.5 V (logic level) | 1.0 - 2.5 V (logic level) |
| Max Junction Temp (C) | 175 C | 175 C | 175 C | 175 C | 175 C | 175 C |
| RoHS / Pb-Free | Yes (PbF) | No (matte tin) | No (matte tin) | Yes | Yes (E3 suffix) | Yes |
Key Differentiators
- Pb-free (PbF) tape-and-reel packaging for RoHS-compliant production (vs IRFR024N)
- Higher continuous current rating than the popular NTD3055-094 (vs NTD3055-094 (onsemi))
- Lower gate charge than larger-current DPAK alternatives (vs SUD50N05-25L-E3 (Vishay))
Design Notes
Estimated: at ID = 10 A continuous and RDS(on) = 75 mOhm at TJ = 25 C, conduction loss is PD = I^2 x R = 7.5 W. With the DPAK theta_JA of approximately 50 C/W on a 1-sq-in. copper pour, this produces a 375 C temperature rise - well above the 175 C junction limit. To handle 10 A continuous the part requires either a substantial copper pour (>= 4 sq in.), a dedicated heatsink, or active airflow. In practice, the IRFR024NTRPBF is best suited for 5-8 A continuous duty in surface-mount designs without external cooling.
Solder the exposed drain tab (Pin 2) to a copper pour on the PCB top layer, using multiple thermal vias to inner-layer copper for additional heat spreading. According to Infineon's DPAK layout guidelines, a minimum 0.5 oz copper pour of 1 sq in. is required to achieve the datasheet thermal ratings. Use a gate-drive resistor of 10-100 ohm to control ringing, and add a 10 kohm pull-down on the gate to prevent inadvertent turn-on during MCU reset.
Do not drive the gate with 3.3 V logic - the IRFR024NTRPBF is a standard-threshold part requiring at least 10 V VGS for full enhancement and minimum RDS(on). Driving with 3.3 V will leave the MOSFET in the linear region, causing high dissipation and possible thermal failure. For direct 3.3 V or 5 V MCU GPIO drive, use a logic-level N-channel MOSFET such as the IRLZ44N instead. Additionally, never exceed VGS = +/- 20 V (absolute maximum) - ESD events on the gate can permanently damage the thin gate oxide.
Keep the gate-drive loop (gate-driver output, gate resistor, MOSFET gate, source return) as small as possible to minimize parasitic inductance. For switching frequencies above 50 kHz, use a star-ground topology where the MOSFET source current returns directly to the input capacitor ground, separate from the analog ground of the controller. This prevents source-inductance-induced turn-on glitches and reduces EMI.
Compliance Information
PbF suffix confirms RoHS-compliant lead-free terminations. NOT AEC-Q100 qualified - for automotive safety applications use an automotive-grade part. Halogen-free per Infineon product declaration. REACH SVHC compliant per current EU declarations.
