IRFR5505TRLPBF vs IRFR9024NTRLPBF Comparison

Detailed side-by-side comparison of IRFR5505TRLPBF by Infineon and IRFR9024NTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFR9024NTRLPBF IRFR9024NTRLPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRLPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRLPBF ✓ Active

Specification Comparison

Parameter IRFR5505TRLPBF IRFR9024NTRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.38 $0.32
Polarity P-Channel P-Channel
MOSFET Operating Mode Enhancement Enhancement
VDS (Drain-Source Voltage) -55 V
VGS (Gate-Source Voltage) [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) -18 A (Tc)
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM]
On-Resistance RDS(on) max 110 mOhm (VGS = -10 V)
Total Gate Charge (Qg) 21.3 nC
Power Dissipation (PD) 57 W (Tc = 25 °C)
Operating Temperature Range -55 °C to +175 °C -55C to +175C
Thermal Resistance Junction-to-Case (RθJC) [DATA_NEEDED: RθJC]
Technology IR MOSFET™ (HEXFET® generation 5) HEXFET (Generation 5)
Package TO-252AA (DPAK), surface mount
Mounting Type Surface Mount Surface Mount
Lead-Free / RoHS Yes (PBF suffix) Yes (LPBF suffix)
MSL Level 1
Drain-Source Voltage (VDS) -55 V
Continuous Drain Current (ID) at TC=25C -11 A
On-Resistance RDS(on) max at VGS=-10V 175 mOhm
Gate-Source Voltage (VGS) max +/-20 V
Power Dissipation (PD) at TC=25C 38 W
Gate Charge (Qg) typical 12.7 nC
Package Type TO-252AA (DPAK)
Pin Count 3 (Drain, Gate, Source + Tab)
Reel Orientation Left (TRL suffix)

Datasheets & Resources

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