IRFR9024NTRLPBF vs IRF7205PBF Comparison

Detailed side-by-side comparison of IRFR9024NTRLPBF by Infineon and IRF7205PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFR9024NTRLPBF IRFR9024NTRLPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRLPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRLPBF βœ“ Active

Specification Comparison

Parameter IRFR9024NTRLPBF IRF7205PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.32 $0.47
Polarity P-Channel P-Channel
MOSFET Operating Mode Enhancement β€”
Drain-Source Voltage (VDS) -55 V -30 V
Continuous Drain Current (ID) at TC=25C -11 A β€”
On-Resistance RDS(on) max at VGS=-10V 175 mOhm 70 mOhm
Gate-Source Voltage (VGS) max +/-20 V β€”
Power Dissipation (PD) at TC=25C 38 W β€”
Gate Charge (Qg) typical 12.7 nC β€”
Package Type TO-252AA (DPAK) β€”
Mounting Type Surface Mount Surface Mount
Pin Count 3 (Drain, Gate, Source + Tab) β€”
Technology HEXFET (Generation 5) IR MOSFET (HEXFET, planar cell)
Operating Temperature Range -55C to +175C -55 C to +150 C (junction)
Lead-Free / RoHS Yes (LPBF suffix) β€”
Reel Orientation Left (TRL suffix) β€”
Continuous Drain Current (ID) β€” -4.6 A
On-Resistance RDS(on) max at VGS=-4.5V β€” [DATA_NEEDED: RDS(on) at VGS=-4.5V]
Gate Threshold Voltage VGS(th) β€” -1 V to -3 V (typical)
Gate Charge Qg β€” [DATA_NEEDED: total gate charge]
Package β€” SO-8
Power Dissipation (TA=25C) β€” [DATA_NEEDED: Pd at TA=25C]
Switching Frequency Optimization β€” Below 100 kHz
Qualification β€” JEDEC standard
RoHS Status β€” Compliant (Pb-free per PBF suffix)
Generation β€” Fourth Generation HEXFET

Datasheets & Resources

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