IRFR9024NTRLPBF vs IRFR5505TRLPBF Comparison

Detailed side-by-side comparison of IRFR9024NTRLPBF by Infineon and IRFR5505TRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFR9024NTRLPBF IRFR9024NTRLPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRLPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRLPBF ✓ Active

Specification Comparison

Parameter IRFR9024NTRLPBF IRFR5505TRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.32 $0.38
Polarity P-Channel P-Channel
MOSFET Operating Mode Enhancement Enhancement
Drain-Source Voltage (VDS) -55 V
Continuous Drain Current (ID) at TC=25C -11 A
On-Resistance RDS(on) max at VGS=-10V 175 mOhm
Gate-Source Voltage (VGS) max +/-20 V
Power Dissipation (PD) at TC=25C 38 W
Gate Charge (Qg) typical 12.7 nC
Package Type TO-252AA (DPAK)
Mounting Type Surface Mount Surface Mount
Pin Count 3 (Drain, Gate, Source + Tab)
Technology HEXFET (Generation 5) IR MOSFET™ (HEXFET® generation 5)
Operating Temperature Range -55C to +175C -55 °C to +175 °C
Lead-Free / RoHS Yes (LPBF suffix) Yes (PBF suffix)
Reel Orientation Left (TRL suffix)
VDS (Drain-Source Voltage) -55 V
VGS (Gate-Source Voltage) [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) -18 A (Tc)
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM]
On-Resistance RDS(on) max 110 mOhm (VGS = -10 V)
Total Gate Charge (Qg) 21.3 nC
Power Dissipation (PD) 57 W (Tc = 25 °C)
Thermal Resistance Junction-to-Case (RθJC) [DATA_NEEDED: RθJC]
Package TO-252AA (DPAK), surface mount
MSL Level 1

Datasheets & Resources

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