IRFR9024NTRPBF vs IRF7309TRPBF Comparison

Detailed side-by-side comparison of IRFR9024NTRPBF by Infineon and IRF7309TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFR9024NTRPBF IRFR9024NTRPBF - 55V 11A P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRPBF - 55V 11A P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRPBF βœ“ Active

Specification Comparison

Parameter IRFR9024NTRPBF IRF7309TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.17 $0.35
Polarity P-Channel N+P
VDS (Drain-Source Voltage) -55 V β€”
Continuous Drain Current (Tc=25C) -11 A β€”
Pulsed Drain Current [DATA_NEEDED: pulsed drain current] β€”
VGS (Gate-Source Voltage) Β±20 V β€”
VGS(th) (Threshold Voltage) [DATA_NEEDED: VGS(th) typical] β€”
RDS(on) Max at VGS=-10V 175 mOhm β€”
Total Gate Charge (Qg) 12.7 nC β€”
Maximum Power Dissipation (Tc=25C) 38 W β€”
Operating Junction Temperature -55C to +175C β€”
Package TO-252AA (DPAK) 8-SO (SOIC-8)
Mounting Type Surface Mount Surface Mount
Pin Count 3 β€”
Technology HEXFET (Gen 5) IR HEXFET Generation V
RoHS Status Compliant Compliant
Configuration β€” Dual N-Channel + P-Channel (Complementary)
Drain-Source Voltage (VDS) β€” 30 V
Continuous Drain Current (N-channel, TA=25C) β€” 4 A
Continuous Drain Current (P-channel, TA=25C) β€” 3 A
On-Resistance (N-channel, max) β€” 50 mOhm
On-Resistance (P-channel, max) β€” [DATA_NEEDED: RDS(on) P-channel value]
Power Dissipation (TA=25C) β€” 1.4 W
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: typical VGS(th) value]
Operating Temperature Range β€” -55C to +150C (TJ)
MSL Level β€” MSL-1 (unlimited floor life per JEDEC J-STD-020)
Lead-Free Status β€” Yes (TRPBF suffix = Pb-free)
Packaging β€” Tape & Reel

Datasheets & Resources

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