IRFR9024NTRPBF vs IRLU024NPBF Comparison
Detailed side-by-side comparison of IRFR9024NTRPBF by Infineon and IRLU024NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRLU024NPBF
IRLU024NPBF - 55V 17A N-Channel HEXFET MOSFET | Infineon
IRLU024NPBF β ActiveSpecification Comparison
| Parameter | IRFR9024NTRPBF | IRLU024NPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.17 | $0.61 |
| Polarity | P-Channel | β |
| VDS (Drain-Source Voltage) | -55 V | β |
| Continuous Drain Current (Tc=25C) | -11 A | β |
| Pulsed Drain Current | [DATA_NEEDED: pulsed drain current] | β |
| VGS (Gate-Source Voltage) | Β±20 V | β |
| VGS(th) (Threshold Voltage) | [DATA_NEEDED: VGS(th) typical] | β |
| RDS(on) Max at VGS=-10V | 175 mOhm | β |
| Total Gate Charge (Qg) | 12.7 nC | 10 nC (typical, per listing) |
| Maximum Power Dissipation (Tc=25C) | 38 W | β |
| Operating Junction Temperature | -55C to +175C | -55C to +175C |
| Package | TO-252AA (DPAK) | IPAK (TO-251AA), Through Hole |
| Mounting Type | Surface Mount | Through Hole |
| Pin Count | 3 | β |
| Technology | HEXFET (Gen 5) | HEXFET Power MOSFET (5th generation) |
| RoHS Status | Compliant | β |
| Manufacturer | β | Infineon Technologies (formerly International Rectifier) |
| Part Number | β | IRLU024NPBF |
| FET Type | β | N-Channel, Logic-Level |
| Drain-to-Source Voltage (VDS) | β | 55 V |
| Continuous Drain Current (ID) at TC=25C | β | 17 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max at VGS=10V | β | 65 mOhm |
| On-Resistance RDS(on) max at VGS=5V | β | [DATA_NEEDED: RDS(on) at VGS=5V] |
| Gate Threshold Voltage VGS(th) | β | [DATA_NEEDED: VGS(th) min/typ/max] |
| Power Dissipation (PD) at TC=25C | β | 45 W |
| Thermal Resistance Junction-to-Case (RthJC) | β | 3.3 C/W |
| Thermal Resistance Junction-to-Ambient (RthJA) | β | 110 C/W (50 C/W PCB-mounted) |
| Lead-Free / RoHS | β | Yes (PBF suffix indicates lead-free plating) |
| Qualification | β | JEDEC standard |
| Gate Drive Voltage (optimized) | β | 10 V (capable of 4.5 V) |