IRFR9120NTRLPBF vs IRFR5305TRLPBF Comparison

Detailed side-by-side comparison of IRFR9120NTRLPBF by Infineon and IRFR5305TRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFR9120NTRLPBF IRFR5305TRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.61 $0.38
Transistor Polarity P-Channel β€”
Drain-Source Voltage (VDS) -100 V -55 V
Continuous Drain Current (ID) -6.6 A (Tc) β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) Β±20 V β€”
Gate Threshold Voltage (VGS(th)) -2 V to -4 V [DATA_NEEDED: VGS(th) range]
On-Resistance (RDS(on)) 480 mOhm max @ VGS = -10 V β€”
Gate Charge (Qg) 18 nC (typ) β€”
Power Dissipation (PD) 40 W (Tc) β€”
Operating Temperature Range -55C to +150C (Tj) β€”
Package TO-252AA (DPAK) TO-252AA (DPAK), surface mount
Mounting Type Surface Mount Surface Mount
Pin Count 3 (Gate, Drain, Source) β€”
Technology IR MOSFET (planar) HEXFET fifth-generation planar MOSFET
MSL Level 1 β€”
RoHS Status Compliant (Pb-free) β€”
Lead-Free Yes β€”
Polarity / Channel Type β€” P-Channel
Continuous Drain Current (ID) at Tc=25C β€” -31 A
Gate-Source Voltage (VGS) max β€” Β±20 V
RDS(on) max at VGS=-10V β€” 65 mΞ©
RDS(on) max at VGS=-5V β€” [DATA_NEEDED: RDS(on) at VGS=-5V]
Power Dissipation (PD) at Tc=25C β€” 110 W
Operating Junction Temperature β€” -55C to +175C
Avalanche Rated β€” Yes (fully avalanche rated)
Lead-Free / RoHS β€” Yes (Pb-free, suffix "PBF")
Tape & Reel Orientation β€” Left orientation (TRLPBF = Tape & Reel, Left)

Datasheets & Resources

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