IRFR9120NTRLPBF vs IRFR9120NTRPBF Comparison

Detailed side-by-side comparison of IRFR9120NTRLPBF by Infineon and IRFR9120NTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFR9120NTRLPBF IRFR9120NTRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.61 $0.32
Transistor Polarity P-Channel β€”
Drain-Source Voltage (VDS) -100 V -100 V
Continuous Drain Current (ID) -6.6 A (Tc) β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) Β±20 V β€”
Gate Threshold Voltage (VGS(th)) -2 V to -4 V [DATA_NEEDED: gate threshold voltage]
On-Resistance (RDS(on)) 480 mOhm max @ VGS = -10 V β€”
Gate Charge (Qg) 18 nC (typ) β€”
Power Dissipation (PD) 40 W (Tc) β€”
Operating Temperature Range -55C to +150C (Tj) β€”
Package TO-252AA (DPAK) TO-252AA (DPAK), surface mount
Mounting Type Surface Mount Surface Mount
Pin Count 3 (Gate, Drain, Source) β€”
Technology IR MOSFET (planar) HEXFET fifth-generation IR MOSFET
MSL Level 1 1 (unlimited floor life)
RoHS Status Compliant (Pb-free) Compliant
Lead-Free Yes β€”
Polarity β€” P-Channel
Continuous Drain Current (ID) at TC=25C β€” -6.6 A
On-Resistance (RDS(on)) max at VGS=-10V β€” 480 milliohm
Gate-Source Voltage (VGS) max β€” +/-20 V
Total Gate Charge (Qg) β€” 18 nC (typical)
Continuous Power Dissipation (PD) at TC=25C β€” 40 W
Operating Junction Temperature Range β€” -55C to +175C
Thermal Resistance Junction-to-Case (RthJC) β€” [DATA_NEEDED: RthJC]
Lead Finish / Plating β€” Pb-free (PBF suffix), Matte Tin
Moisture Sensitivity β€” MSL1 per JEDEC J-STD-020

Datasheets & Resources

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