IRFR9120NTRPBF vs IRF7319TRPBF Comparison
Detailed side-by-side comparison of IRFR9120NTRPBF by Infineon and IRF7319TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFR9120NTRPBF | IRF7319TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.32 | $0.62 |
| Polarity | P-Channel | β |
| Drain-Source Voltage (VDS) | -100 V | β |
| Continuous Drain Current (ID) at TC=25C | -6.6 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance (RDS(on)) max at VGS=-10V | 480 milliohm | β |
| Gate-Source Voltage (VGS) max | +/-20 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | [DATA_NEEDED: VGS(th) typ/min/max] |
| Total Gate Charge (Qg) | 18 nC (typical) | β |
| Continuous Power Dissipation (PD) at TC=25C | 40 W | β |
| Operating Junction Temperature Range | -55C to +175C | β |
| Thermal Resistance Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC] | β |
| Package | TO-252AA (DPAK), surface mount | β |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (unlimited floor life) | β |
| Lead Finish / Plating | Pb-free (PBF suffix), Matte Tin | β |
| Technology | HEXFET fifth-generation IR MOSFET | IR MOSFET / Fifth Generation HEXFET |
| RoHS Status | Compliant | β |
| Moisture Sensitivity | MSL1 per JEDEC J-STD-020 | β |
| Manufacturer | β | Infineon Technologies (formerly International Rectifier) |
| Product Type | β | Dual MOSFET Array (N-channel + P-channel) |
| Drain-to-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current N-channel (ID) | β | 6.5 A |
| Continuous Drain Current P-channel (ID) | β | 4.9 A |
| RDS(on) Max N-channel | β | 29 mOhm (per Infineon product page) |
| RDS(on) Max P-channel | β | [DATA_NEEDED: P-channel RDS(on) max] |
| Total Power Dissipation (PD) | β | 2 W |
| Thermal Resistance Junction-to-Ambient N-ch | β | 120 C/W (steady state) |
| Thermal Resistance Junction-to-Ambient P-ch | β | 110 C/W (steady state) |
| Package Type | β | 8-SOIC (SO-8) |
| Operating Temperature Range | β | -55C to +150C (junction) |
| Lead-Free / RoHS | β | Yes (PBF suffix = Pb-free) |
| Packaging | β | Tape & Reel (TR suffix) |
| Configuration | β | N-Channel + P-Channel (complementary half-bridge) |