IRFR9120NTRPBF vs IRFR9120NTRLPBF Comparison

Detailed side-by-side comparison of IRFR9120NTRPBF by Infineon and IRFR9120NTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFR9120NTRPBF IRFR9120NTRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.32 $0.61
Polarity P-Channel β€”
Drain-Source Voltage (VDS) -100 V -100 V
Continuous Drain Current (ID) at TC=25C -6.6 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
On-Resistance (RDS(on)) max at VGS=-10V 480 milliohm β€”
Gate-Source Voltage (VGS) max +/-20 V β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] -2 V to -4 V
Total Gate Charge (Qg) 18 nC (typical) β€”
Continuous Power Dissipation (PD) at TC=25C 40 W β€”
Operating Junction Temperature Range -55C to +175C β€”
Thermal Resistance Junction-to-Case (RthJC) [DATA_NEEDED: RthJC] β€”
Package TO-252AA (DPAK), surface mount TO-252AA (DPAK)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (unlimited floor life) 1
Lead Finish / Plating Pb-free (PBF suffix), Matte Tin β€”
Technology HEXFET fifth-generation IR MOSFET IR MOSFET (planar)
RoHS Status Compliant Compliant (Pb-free)
Moisture Sensitivity MSL1 per JEDEC J-STD-020 β€”
Transistor Polarity β€” P-Channel
Continuous Drain Current (ID) β€” -6.6 A (Tc)
Gate-Source Voltage (VGS) β€” Β±20 V
On-Resistance (RDS(on)) β€” 480 mOhm max @ VGS = -10 V
Gate Charge (Qg) β€” 18 nC (typ)
Power Dissipation (PD) β€” 40 W (Tc)
Operating Temperature Range β€” -55C to +150C (Tj)
Pin Count β€” 3 (Gate, Drain, Source)
Lead-Free β€” Yes

Datasheets & Resources

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