IRFS3306PBF vs IRFB3207ZPBF Comparison
Detailed side-by-side comparison of IRFS3306PBF by Infineon and IRFB3207ZPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFS3306PBF | IRFB3207ZPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.28 | $1.62 |
| FET Type | N-Channel | β |
| Technology | HEXFET (IR MOSFET) | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| Drain-to-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID, Tc) | 120 A (package limited) | β |
| Continuous Drain Current (ID, silicon limited) | 160 A | β |
| Gate-to-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th)] | β |
| On-Resistance RDS(on) max @ VGS=10V | 4.2 mOhm | 4.1 mOhm |
| On-Resistance RDS(on) typ @ VGS=10V | 3.3 mOhm | 3.3 mOhm |
| Total Gate Charge (Qg) typ | 85 nC | β |
| Gate-to-Drain Charge (Qgd) typ | [DATA_NEEDED: Qgd nominal value] | β |
| Power Dissipation (Pd) max @ Tc=25C | 230 W | β |
| Operating Junction Temperature | -55C to +175C | -55 C to +175 C |
| Package | D2PAK (TO-263AB) surface mount | TO-220AB (3-lead through-hole) |
| Mounting Type | Surface Mount | Through Hole |
| MSL Level | 1 (per JEDEC J-STD-020) | N/A (through-hole) |
| Lead-Free / RoHS | PbF (lead-free), RoHS compliant | Yes (PBF suffix = lead-free) |
| Manufacturer | β | Infineon Technologies (formerly International Rectifier) |
| Part Number | β | IRFB3207ZPBF |
| Series | β | HEXFET |
| Drain-Source Voltage (VDS) | β | 75 V |
| Continuous Drain Current (ID) at TC=25C | β | 120 A |
| Silicon-Limited Drain Current | β | 170 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current value] |
| Gate Threshold Voltage VGS(th) | β | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge Qg | β | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | β | 300 W |
| Avalanche Rated | β | Yes (improved Z-variant ruggedness) |