IRFS3306PBF - 60V 120A N-Channel HEXFET MOSFET | Infineon
MPN: IRFS3306PBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.85 | $2.85 |
| 10 | $2.58 | $25.80 |
| 100 | $2.18 | $218.00 |
| 500 | $1.79 | $895.00 |
| 1,000 | $1.52 | $1,520.00 |
| 3,000 | $1.28 | $3,840.00 |
IRFS3306PBF Overview
An N-channel HEXFET MOSFET is a type of power field-effect transistor that uses an electrically insulated gate to control current flow between the drain and source terminals. HEXFET (HEXagonal FET) refers to Infineon's (formerly International Rectifier) planar cell architecture that arranges thousands of small hexagonal cells in parallel to minimize on-resistance and improve switching performance. In the broader semiconductor hierarchy, this device is a discrete MOSFET, itself a member of the power MOSFET family, which sits within the power semiconductor category used in switching-mode power supplies, motor drives, and DC-DC conversion.
Key features include a typical gate charge of 85 nC, low RDS(on) of 3.3 mOhm, a logic-level-friendly 10 V VGS drive (VGS(th) typically in the 2-4 V range), and avalanche-rated intrinsic body diode for synchronous rectification. The D2PAK (TO-263) surface-mount package exposes the die to the PCB copper for direct heatsinking and provides a JEDEC-95 TO-263AB outline with a mounting tab that doubles as the drain terminal. Operating junction temperature spans -55C to +175C, well above the automotive and industrial norms.
Architecturally, the IRFS3306PBF is optimized for synchronous-rectifier duty in secondary-side SMPS loops where it replaces Schottky diodes to reduce conduction loss. Its low Qg and low Qrr body-diode recovery charge enable efficient operation at high switching frequencies, while the 60 V rating provides comfortable margin for 12 V and 24 V bus rails including transients in telecom and industrial systems.
Typical applications include high-current synchronous rectification in switch-mode power supplies, secondary-side OR-ing in uninterruptible power supplies, high-frequency DC-DC converter primary switches, motor-drive H-bridges, and hot-swap circuits in server and telecom power shelves. When designing with this part, ensure the gate-drive voltage swing is at least 10 V for full enhancement and that the PCB copper under the D2PAK tab is sized for the continuous dissipation target.
This page synthesizes distributor pricing, drop-in alternatives, and design notes not consolidated in the manufacturer datasheet alone.
Drop-in alternatives for IRFS3306PBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRFS3306PBF (same form factor and footprint) — differing in Package, Technology, Operating Junction Temperature, Mounting Type, FET Type.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRFSL3306PBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRFB3306PBF
✅ Drop-In✓ In Stock
$1.05 / Unit
View Datasheet →IRFB3207ZPBF
✅ Drop-In✓ In Stock
$1.62 / Unit
View Datasheet →IRFS3306PBF Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Technology | HEXFET (IR MOSFET) |
| Drain-to-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID, Tc) | 120 A (package limited) |
| Continuous Drain Current (ID, silicon limited) | 160 A |
| On-Resistance RDS(on) max @ VGS=10V | 4.2 mOhm |
| On-Resistance RDS(on) typ @ VGS=10V | 3.3 mOhm |
| Total Gate Charge (Qg) typ | 85 nC |
| Power Dissipation (Pd) max @ Tc=25C | 230 W |
| Operating Junction Temperature | -55C to +175C |
| Package | D2PAK (TO-263AB) surface mount |
| Mounting Type | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) |
| Lead-Free / RoHS | PbF (lead-free), RoHS compliant |
IRFS3306PBF Pin Configuration
| Pin 1 | Gate — Gate drive input; 10V typical VGS for full enhancement |
| Pin 2 | Drain — Drain terminal; internally bonded to metal tab |
| Pin 3 | Source — Source terminal; reference for VGS and current return |
| Pin Tab | Drain (Tab) — Metal mounting tab electrically connected to pin 2 Drain; provides heatsinking path |
Safe Operating Area (DC)
Typical Applications
IRFS3306PBF is suitable for 6 applications: Synchronous Rectification in SMPS, Uninterruptible Power Supply (UPS) OR-ing, High-Speed Power Switching, Motor Drive H-Bridge, Hot-Swap and Load Switch in Telecom, Solar Charge Controller / Battery Management.
Synchronous Rectification in SMPS
The IRFS3306PBF is purpose-built for synchronous rectification in switch-mode power supplies where it replaces lossy Schottky diodes on the secondary side. Its 3.3 mOhm typical RDS(on) at VGS=10V cuts conduction loss dramatically versus Schottky diodes, while the 85 nC total gate charge and low Qrr body diode keep switching loss low at 100 kHz to 500 kHz operation. Used in 12 V, 24 V, and 48 V output rails of telecom and server power supplies, it dissipates heat efficiently via the D2PAK tab bonded to PCB copper. This part is a textbook choice for the low-side synchronous FET in a half-bridge or full-bridge secondary.
Recommended
Uninterruptible Power Supply (UPS) OR-ing
In UPS and battery-backed systems, the IRFS3306PBF serves as the OR-ing FET between the AC-rectified bus and battery feed, blocking reverse current during power transitions. Its 60 V VDS handles 24 V and 48 V battery stacks with margin, and the 120 A continuous drain current rating supports kilowatt-class UPS modules. The low RDS(on) of 3.3 mOhm keeps voltage drop across the FET below 400 mV at full load, preserving battery run-time. Fast body diode recovery prevents cross-conduction during switchover events.
Recommended
High-Speed Power Switching
The IRFS3306PBF supports hard-switched high-frequency applications including DC-DC converter primary switches and motor drive H-bridges. Its 85 nC Qg and low gate resistance allow switching into the hundreds of kHz without excessive gate-drive loss. The 60 V VDS provides adequate margin for nominal 24 V and 36 V bus rails, while the 230 W power dissipation rating in D2PAK handles the thermal load of high duty-cycle switching. The intrinsic body diode is avalanche-rated, making the device robust against inductive kick events.
Recommended
Motor Drive H-Bridge
In H-bridge and half-bridge motor drivers, the IRFS3306PBF serves as the low-side or high-side switch for brushed DC and stepper motor windings up to 60 V and 120 A. Its low RDS(on) minimizes I2R loss during PWM commutation, while the 175C maximum junction temperature supports sustained high-current operation. The D2PAK package exposes the drain tab to PCB copper for direct heatsinking, critical in space-constrained motor control PCBs. Pair with a P-channel or complementary N-channel high-side FET for full H-bridge topology.
Recommended
Hot-Swap and Load Switch in Telecom
The IRFS3306PBF enables hot-swap insertion in telecom and server -48 V power shelves where inrush current limiting and reverse-blocking are required. Its 60 V VDS handles -48 V plus transient ringing, and the 120 A continuous current rating covers 50 A to 80 A load switch applications with margin. The 3.3 mOhm typical RDS(on) keeps voltage drop across the FET below 400 mV at full load, preserving system efficiency. Combined with a gate-charge controller, it forms a robust inrush-limiting solution.
Recommended
Solar Charge Controller / Battery Management
In solar charge controllers and battery management systems, the IRFS3306PBF functions as the high-current switching element for MPPT converters, charge/discharge paths, and battery isolation. Its 60 V VDS comfortably handles 12 V, 24 V, and 36 V battery banks with PV input transients clamped at 60 V. The 3.3 mOhm RDS(on) yields >97% efficiency at 50 A continuous battery current, critical for minimizing heat in enclosed charge controller enclosures. The D2PAK package enables PCB-mount heatsinking without active cooling.
Recommended
Recommended Products Summary
Engineering reference data for IRFS3306PBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRFSL3306PBF | IRFB3306PBF | IRFB3207ZPBF |
|---|---|---|---|---|
| Package | D2PAK (TO-263AB) | D2PAK (TO-263AB) - same | TO-220 (through-hole, NOT drop-in footprint) | TO-220 (through-hole, NOT drop-in footprint) |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Drain-to-Source Voltage (VDS) | 60 V | 60 V | 60 V | 75 V |
| Continuous Drain Current (ID @ Tc=25C) | 120 A (package) | 120 A (package) | 120 A (package) | 120 A (package) |
| On-Resistance RDS(on) typ @ VGS=10V | 3.3 mOhm | 3.3 mOhm | 3.3 mOhm | 4.5 mOhm |
| On-Resistance RDS(on) max @ VGS=10V | 4.2 mOhm | 4.2 mOhm | 4.2 mOhm | 5.6 mOhm |
| Total Gate Charge (Qg) | 85 nC | 85 nC | 85 nC | 110 nC |
| Power Dissipation (Pd) | 230 W | 230 W | 230 W | 230 W |
| Technology | HEXFET (IR MOSFET) | HEXFET (IR MOSFET) | HEXFET (IR MOSFET) | HEXFET (IR MOSFET) |
Key Differentiators
- True D2PAK drop-in with lead-formed option in same Infineon family (vs IRFB3306PBF)
- Lower RDS(on) than the higher-voltage IRFB3207ZPBF (vs IRFB3207ZPBF)
- Proven HEXFET technology with decades of design heritage (vs Newer-generation MOSFETs)
Design Notes
Estimated: at continuous 50 A drain current and RDS(on)=4.2 mOhm at Tj=125C (RDS(on) roughly doubles from 25C), conduction loss is approximately 50^2 x 4.2e-3 x 2 = 21 W. With D2PAK junction-to-ambient thermal resistance typically 40-62 C/W on 1 sq inch of FR-4 copper, junction temperature rise is 21 x 50 = 1050 C above ambient - clearly requiring either substantial copper area (>=4 sq inches), forced-air cooling, or a clip-on heatsink bonded to the D2PAK tab. For continuous 100 A operation the tab MUST be bonded to a metal heatsink or direct-bond copper substrate.
Per Infineon application note AN-994, the D2PAK copper pad under the drain tab must be sized to handle the full power dissipation budget. Use at least 1 sq inch of 2 oz copper for 5 W dissipation, and 4+ sq inches for 20 W dissipation. Place the gate drive resistor (typically 10-47 ohm) within 5 mm of the gate pin to prevent parasitic oscillation. Use a Kelvin source connection (separate power and sense source traces tied only at the package pin) for high-current switching above 50 A to avoid source-inductance-induced gate ringing.
Estimated: the switching loop from the synchronous FET drain through the output inductor back to the synchronous FET source must be minimized to control voltage overshoot and EMI. At 100 kHz switching with 50 A, every 10 nH of parasitic inductance in this loop produces approximately 50 V of overshoot (V=L x di/dt with di/dt = 50 A / 100 ns). Keep the synchronous FET, output capacitor, and freewheel diode (or high-side FET) in a tight triangular layout with overlapping copper pours to cancel field energy.
Do not exceed the avalanche rating during switching transients - the IRFS3306PBF is avalanche-rated but repetitive avalanche operation shortens lifetime. Add a snubber or RC damper across the synchronous FET drain-source in high-voltage applications. Never drive the gate above the VGS maximum (typically +/-20 V) - a gate Zener clamp of 16-18 V is recommended when using a 12 V or 15 V gate drive supply. For body-diode conduction paths, verify that the reverse-recovery charge Qrr does not cause excessive dv/dt-triggered turn-on in the complementary high-side FET.
Compliance Information
PbF suffix denotes lead-free (Pb-free) plating per Infineon datasheet. RoHS compliant. The part is targeted at industrial and consumer SMPS/UPS, not automotive - AEC-Q100 grade variants should be requested separately if needed.
