IRFS3306PBF vs IRFB3306PBF Comparison

Detailed side-by-side comparison of IRFS3306PBF by Infineon and IRFB3306PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFS3306PBF IRFB3306PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.28 $1.05
FET Type N-Channel N-Channel
Technology HEXFET (IR MOSFET) IR HEXFET (MOSFET)
Drain-to-Source Voltage (VDS) 60 V β€”
Continuous Drain Current (ID, Tc) 120 A (package limited) β€”
Continuous Drain Current (ID, silicon limited) 160 A β€”
Gate-to-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th)] β€”
On-Resistance RDS(on) max @ VGS=10V 4.2 mOhm β€”
On-Resistance RDS(on) typ @ VGS=10V 3.3 mOhm β€”
Total Gate Charge (Qg) typ 85 nC [DATA_NEEDED: total gate charge Qg]
Gate-to-Drain Charge (Qgd) typ [DATA_NEEDED: Qgd nominal value] β€”
Power Dissipation (Pd) max @ Tc=25C 230 W β€”
Operating Junction Temperature -55C to +175C -55Β°C to +175Β°C
Package D2PAK (TO-263AB) surface mount TO-220AB (through-hole)
Mounting Type Surface Mount Through Hole
MSL Level 1 (per JEDEC J-STD-020) β€”
Lead-Free / RoHS PbF (lead-free), RoHS compliant β€”
Drain-Source Voltage (Vdss) β€” 60 V
Continuous Drain Current (Id) at Tc=25Β°C β€” 120 A
Pulsed Drain Current (Idm) β€” [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (Vgs) max β€” Β±20 V
Rds(on) max @ Vgs=10V β€” 4.2 mΞ©
Gate Threshold Voltage (Vgs(th)) β€” [DATA_NEEDED: Vgs(th) typical value]
Gate-Drain Charge (Qgd) typ β€” 26 nC (nominal)
Power Dissipation (Pd) at Tc=25Β°C β€” 230 W
RoHS / Lead-Free (PbF) β€” Yes (PbF suffix indicates lead-free, RoHS compliant)
Avalanche Rated β€” Yes
Body Diode β€” Intrinsic (avalanche-rated)

Datasheets & Resources

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