IRFZ24NPBF vs IRFZ48NSTRLPBF Comparison
Detailed side-by-side comparison of IRFZ24NPBF by Infineon and IRFZ48NSTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFZ24NPBF | IRFZ48NSTRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.46 | $1.18 |
| FET Type | N-Channel | N-Channel Power MOSFET |
| Drain-to-Source Voltage (VDS) | 55 V | 55 V |
| Continuous Drain Current (ID) at TC=25C | 17 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) | Β± 20 V | β |
| RDS(on) at VGS=10V | 70 mOhm (max) | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | β |
| Total Gate Charge (Qg) | 13.3 nC | 54 nC |
| Power Dissipation (PD) at TC=25C | 45 W | β |
| Operating Junction Temperature | -55C to +175C | -55C to +175C |
| Package | TO-220AB (through hole) | D2PAK (TO-263) Surface Mount |
| Mounting Type | Through Hole | Surface Mount |
| Technology | HEXFET planar cell | β |
| Switching Frequency Range | Optimized for < 100 kHz | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes (PBF suffix) | β |
| Qualification | JEDEC standard | β |
| Channel Mode | Enhancement | β |
| Continuous Drain Current (ID) @ Tc=25C | β | 64 A |
| Static Drain-to-Source On-Resistance (Rds(on)) | β | 14 mΞ© at VGS = 10 V |
| Gate-to-Source Threshold Voltage (VGS(th)) | β | 2.0 V to 4.0 V |
| Gate-to-Source Voltage (VGS) max | β | Β±20 V |
| Power Dissipation (Pd) @ Tc=25C | β | 130 W |
| Power Dissipation (Pd) @ Ta=25C on FR-4 | β | 3.8 W |
| Packaging | β | Tape & Reel (13-inch reel, TRL) |
| Lead Finish | β | Lead-free (PBF) matte tin |
| Technology Family | β | HEXFET advanced process technology |