IRFZ34NPBF vs IRFZ48NSTRLPBF Comparison
Detailed side-by-side comparison of IRFZ34NPBF by Infineon and IRFZ48NSTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFZ34NPBF | IRFZ48NSTRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.61 | $1.18 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | β |
| Part Status | Active | β |
| FET Type | N-Channel, Enhancement Mode | N-Channel Power MOSFET |
| Technology | HEXFET (Planar DMOS, 5th generation) | β |
| Drain-Source Voltage (V_DSS) | 55 V | β |
| Continuous Drain Current (I_D) at Tc=25C | 29 A | β |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | β |
| Power Dissipation (P_D) at Tc=25C | 68 W | β |
| On-Resistance R_DS(on) max at V_GS=10V | 40 mOhm | β |
| Gate Charge (Q_g) typ | 22.7 nC | β |
| Gate Threshold Voltage V_GS(th) typ | [DATA_NEEDED: gate threshold voltage] | β |
| Input Capacitance (C_iss) typ | [DATA_NEEDED: input capacitance] | β |
| Operating Temperature Range | -55 C to +175 C | β |
| Maximum Junction Temperature | 175 C | β |
| Package | TO-220AB (3-pin + tab, through-hole) | D2PAK (TO-263) Surface Mount |
| Mounting Type | Through Hole | Surface Mount |
| Lead-Free Status | Yes (Pb-free, RoHS compliant) | β |
| Qualification | JEDEC standard | β |
| RoHS Status | Compliant | Compliant |
| Configuration | Single N-Channel, 3-pin (3+tab) | β |
| Drain-to-Source Voltage (VDS) | β | 55 V |
| Continuous Drain Current (ID) @ Tc=25C | β | 64 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Static Drain-to-Source On-Resistance (Rds(on)) | β | 14 mΞ© at VGS = 10 V |
| Gate-to-Source Threshold Voltage (VGS(th)) | β | 2.0 V to 4.0 V |
| Total Gate Charge (Qg) | β | 54 nC |
| Gate-to-Source Voltage (VGS) max | β | Β±20 V |
| Power Dissipation (Pd) @ Tc=25C | β | 130 W |
| Power Dissipation (Pd) @ Ta=25C on FR-4 | β | 3.8 W |
| Operating Junction Temperature | β | -55C to +175C |
| Packaging | β | Tape & Reel (13-inch reel, TRL) |
| Lead Finish | β | Lead-free (PBF) matte tin |
| Technology Family | β | HEXFET advanced process technology |