IRFZ48NSTRLPBF vs IRFZ24NPBF Comparison

Detailed side-by-side comparison of IRFZ48NSTRLPBF by Infineon and IRFZ24NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFZ48NSTRLPBF IRFZ24NPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.18 $0.46
FET Type N-Channel Power MOSFET N-Channel
Drain-to-Source Voltage (VDS) 55 V 55 V
Continuous Drain Current (ID) @ Tc=25C 64 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Static Drain-to-Source On-Resistance (Rds(on)) 14 mΞ© at VGS = 10 V β€”
Gate-to-Source Threshold Voltage (VGS(th)) 2.0 V to 4.0 V β€”
Total Gate Charge (Qg) 54 nC 13.3 nC
Gate-to-Source Voltage (VGS) max Β±20 V β€”
Power Dissipation (Pd) @ Tc=25C 130 W β€”
Power Dissipation (Pd) @ Ta=25C on FR-4 3.8 W β€”
Operating Junction Temperature -55C to +175C -55C to +175C
Package D2PAK (TO-263) Surface Mount TO-220AB (through hole)
Mounting Type Surface Mount Through Hole
Packaging Tape & Reel (13-inch reel, TRL) β€”
Lead Finish Lead-free (PBF) matte tin β€”
RoHS Status Compliant Compliant
Technology Family HEXFET advanced process technology β€”
Continuous Drain Current (ID) at TC=25C β€” 17 A
Gate-to-Source Voltage (VGS) β€” Β± 20 V
RDS(on) at VGS=10V β€” 70 mOhm (max)
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical/min/max]
Power Dissipation (PD) at TC=25C β€” 45 W
Technology β€” HEXFET planar cell
Switching Frequency Range β€” Optimized for < 100 kHz
Lead-Free β€” Yes (PBF suffix)
Qualification β€” JEDEC standard
Channel Mode β€” Enhancement

Datasheets & Resources

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