IRFZ48NSTRLPBF vs IRLB4030PBF Comparison

Detailed side-by-side comparison of IRFZ48NSTRLPBF by Infineon and IRLB4030PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFZ48NSTRLPBF IRLB4030PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.18 $3.10
FET Type N-Channel Power MOSFET β€”
Drain-to-Source Voltage (VDS) 55 V 100 V
Continuous Drain Current (ID) @ Tc=25C 64 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current value]
Static Drain-to-Source On-Resistance (Rds(on)) 14 mΞ© at VGS = 10 V β€”
Gate-to-Source Threshold Voltage (VGS(th)) 2.0 V to 4.0 V β€”
Total Gate Charge (Qg) 54 nC 87 nC
Gate-to-Source Voltage (VGS) max Β±20 V [DATA_NEEDED: VGS absolute maximum, typical +/- 20 V]
Power Dissipation (Pd) @ Tc=25C 130 W β€”
Power Dissipation (Pd) @ Ta=25C on FR-4 3.8 W β€”
Operating Junction Temperature -55C to +175C β€”
Package D2PAK (TO-263) Surface Mount TO-220AB
Mounting Type Surface Mount Through Hole
Packaging Tape & Reel (13-inch reel, TRL) β€”
Lead Finish Lead-free (PBF) matte tin β€”
RoHS Status Compliant Compliant
Technology Family HEXFET advanced process technology β€”
Transistor Type β€” N-Channel MOSFET
Continuous Drain Current (ID) at Tc β€” 180 A
On-Resistance RDS(on) max at VGS=10V β€” 4.3 mOhm
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: gate threshold voltage]
Power Dissipation (PD) at Tc β€” 370 W
Operating Temperature Range β€” -55C to +175C
Technology β€” HEXFET (StrongIRFET family)
Logic Level Drive β€” Yes (optimized for 4.5 V to 10 V VGS)
Qualification β€” JEDEC

Datasheets & Resources

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