IRFZ48NSTRLPBF vs IRLR3410TRPBF Comparison

Detailed side-by-side comparison of IRFZ48NSTRLPBF by Infineon and IRLR3410TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFZ48NSTRLPBF IRLR3410TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.18 $0.81
FET Type N-Channel Power MOSFET N-Channel
Drain-to-Source Voltage (VDS) 55 V β€”
Continuous Drain Current (ID) @ Tc=25C 64 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
Static Drain-to-Source On-Resistance (Rds(on)) 14 mΞ© at VGS = 10 V β€”
Gate-to-Source Threshold Voltage (VGS(th)) 2.0 V to 4.0 V β€”
Total Gate Charge (Qg) 54 nC 22.7 nC
Gate-to-Source Voltage (VGS) max Β±20 V β€”
Power Dissipation (Pd) @ Tc=25C 130 W β€”
Power Dissipation (Pd) @ Ta=25C on FR-4 3.8 W β€”
Operating Junction Temperature -55C to +175C β€”
Package D2PAK (TO-263) Surface Mount TO-252AA (DPAK), surface mount
Mounting Type Surface Mount Surface Mount
Packaging Tape & Reel (13-inch reel, TRL) β€”
Lead Finish Lead-free (PBF) matte tin β€”
RoHS Status Compliant β€”
Technology Family HEXFET advanced process technology β€”
Technology β€” HEXFET (IR MOSFET, 5th generation)
Drain-Source Voltage (Vdss) β€” 100 V
Continuous Drain Current (Id) at Tc=25C β€” 17 A
Power Dissipation (Pd) at Tc=25C β€” 79 W
On-Resistance RDS(on) max β€” 105 mOhm
Gate Threshold Voltage Vgs(th) β€” Logic-level (drive ~4.5V)
Operating Temperature Range β€” -55C to +175C (junction)
Lead-Free / RoHS β€” Yes (PBF suffix)
MSL Level β€” 1 (unlimited floor life at <30C/85% RH)
Drain Tab Connection β€” Tab electrically tied to Drain
Polarity β€” N-Channel enhancement mode

Datasheets & Resources

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