IRL3705NPBF vs IRF3205STRLPBF Comparison
Detailed side-by-side comparison of IRL3705NPBF by Infineon and IRF3205STRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRL3705NPBF | IRF3205STRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.92 | $1.02 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (V_DS) | 55 V | β |
| Continuous Drain Current (I_D) at Tc | 89 A | β |
| Pulsed Drain Current | [DATA_NEEDED: pulsed drain current] | β |
| Power Dissipation (P_D) at Tc | 170 W | β |
| On-Resistance R_DS(on) | 10 mOhm (typical, V_GS = 5 V) | β |
| Gate Threshold V_GS(th) | [DATA_NEEDED: gate threshold voltage] | β |
| Total Gate Charge Q_g | 65.3 nC | β |
| Maximum Junction Temperature | 175 C | β |
| Technology | HEXFET (planar cell, fifth generation) | HEXFET (advanced process) |
| Package | TO-220AB (3-pin through-hole) | TO-263-3 (D2PAK) |
| Mounting Type | Through Hole | Surface Mount |
| Gate Drive Level | Logic-level | β |
| Avalanche Rated | Yes (ruggedized single-pulse avalanche) | β |
| Lead-Free (PBF suffix) | Yes | β |
| RoHS Status | Compliant (per PBF suffix) | β |
| Polarity | β | N-Channel |
| MOSFET Operating Mode | β | Enhancement |
| Drain-Source Voltage (Vdss) | β | 55 V |
| Continuous Drain Current (Id) @ Tc=25Β°C | β | 110 A |
| Pulsed Drain Current (Idm) | β | 390 A |
| Static Drain-Source On-Resistance (Rds(on)) | β | 8 mΞ© max @ Vgs=10V |
| Gate-Source Threshold Voltage (Vgs(th)) | β | 2.0 V to 4.0 V |
| Total Gate Charge (Qg) | β | 97.3 nC typical |
| Power Dissipation (Pd) @ Tc=25Β°C | β | 200 W |
| Operating Temperature Range | β | -55 Β°C to +175 Β°C (Tj) |
| Lead-Free / RoHS Status | β | Lead-Free / RoHS Compliant (PBF suffix) |
| Packaging | β | Tape & Reel (STRL) |