IRL40S212ARMA1 vs BSC117N08NS5ATMA1 Comparison

Detailed side-by-side comparison of IRL40S212ARMA1 by Infineon and BSC117N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC117N08NS5ATMA1 BSC117N08NS5ATMA1 - 80V 49A OptiMOS 5 N-FET | Infineon

BSC117N08NS5ATMA1 - 80V 49A OptiMOS 5 N-FET | Infineon

BSC117N08NS5ATMA1 βœ“ Active

Specification Comparison

Parameter IRL40S212ARMA1 BSC117N08NS5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.31 $0.46
Manufacturer Infineon Technologies Infineon Technologies
Part Family StrongIRFETβ„’ β€”
Transistor Type N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 40 V β€”
Continuous Drain Current (ID, Tc) 195 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
On-Resistance (RDS(on)) 1.9 mOhm max β€”
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ] [DATA_NEEDED: VGS(th) value]
Power Dissipation (PD, Tc) 231 W β€”
Operating Temperature Range [DATA_NEEDED: Tj max] -55 C to +150 C (typical MOSFET junction)
Package PG-TO263-3 (D2PAK) PG-TDSON-8-7 (SuperSO8 5x6)
Mounting Type Surface Mount Surface Mount
Technology StrongIRFETβ„’ (planar N-channel) OptiMOS 5
RoHS Status Compliant Compliant
Lead-Free Yes Yes
MSL Level 1 (unlimited) 1
Part Number β€” BSC117N08NS5ATMA1
Drain-Source Voltage (VDS) max β€” 80 V
Continuous Drain Current (ID) max β€” 49 A (Tc)
On-State Resistance (RDS(on)) max β€” 11.7 mOhm
Power Dissipation (Ta) β€” 2.5 W
Power Dissipation (Tc) β€” 50 W
Pin Count β€” 8
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg value]

Datasheets & Resources

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