IRL40S212ARMA1 vs BSZ900N20NS3GATMA1 Comparison
Detailed side-by-side comparison of IRL40S212ARMA1 by Infineon and BSZ900N20NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ900N20NS3GATMA1
BSZ900N20NS3GATMA1 - 200V N-Ch MOSFET 15.2A | Infineon OptiMOS 3
BSZ900N20NS3GATMA1 β ActiveSpecification Comparison
| Parameter | IRL40S212ARMA1 | BSZ900N20NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.31 | $0.48 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | StrongIRFETβ’ | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 40 V | 200 V |
| Continuous Drain Current (ID, Tc) | 195 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: IDM] |
| On-Resistance (RDS(on)) | 1.9 mOhm max | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ] | β |
| Power Dissipation (PD, Tc) | 231 W | β |
| Operating Temperature Range | [DATA_NEEDED: Tj max] | β |
| Package | PG-TO263-3 (D2PAK) | PG-TSDSON-8 (TDSON-8 FL) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | StrongIRFETβ’ (planar N-channel) | OptiMOS 3 (N-Channel Trench MOSFET) |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| MSL Level | 1 (unlimited) | 1 (unlimited) |
| Part Number | β | BSZ900N20NS3GATMA1 |
| Continuous Drain Current (ID, Tc=25C) | β | 15.2 A |
| Static Drain-Source On-Resistance (RDS(on) max @ VGS=10V) | β | 90 mΞ© |
| Typical RDS(on) @ VGS=10V | β | 77 mΞ© |
| Gate-Source Voltage (VGS) | β | Β±20 V |
| Gate Threshold Voltage (VGS(th) typ) | β | 3.5 V |
| Total Gate Charge (Qg typ) | β | [DATA_NEEDED: Qg] |
| Power Dissipation (PD, Tc=25C) | β | 62.5 W |
| Operating Junction Temperature | β | -55C to +150C |
| Thermal Resistance Junction-to-Case (RthJC) | β | [DATA_NEEDED: RthJC] |
| Lead-Free / Halogen-Free | β | Yes / Yes |
| ESD Protection | β | Yes (integrated) |
| Avalanche Energy Rated | β | Yes (EAS) |