IRL40S212ARMA1 vs IPD034N06N3GATMA1 Comparison

Detailed side-by-side comparison of IRL40S212ARMA1 by Infineon and IPD034N06N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD034N06N3GATMA1 IPD034N06N3GATMA1 - 60V 100A OptiMOS 3 N-MOSFET | Infineon

IPD034N06N3GATMA1 - 60V 100A OptiMOS 3 N-MOSFET | Infineon

IPD034N06N3GATMA1 βœ“ Active

Specification Comparison

Parameter IRL40S212ARMA1 IPD034N06N3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.31 $0.51
Manufacturer Infineon Technologies Infineon Technologies
Part Family StrongIRFETβ„’ β€”
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 40 V 60 V
Continuous Drain Current (ID, Tc) 195 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
On-Resistance (RDS(on)) 1.9 mOhm max β€”
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] [DATA_NEEDED: max VGS rating]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ] β€”
Power Dissipation (PD, Tc) 231 W β€”
Operating Temperature Range [DATA_NEEDED: Tj max] [DATA_NEEDED: Tj min/max]
Package PG-TO263-3 (D2PAK) PG-TO252-3 (DPAK)
Mounting Type Surface Mount Surface Mount
Technology StrongIRFETβ„’ (planar N-channel) N-Channel Trench MOSFET (OptiMOS 3)
RoHS Status Compliant Compliant (Pb-free green finish)
Lead-Free Yes β€”
MSL Level 1 (unlimited) [DATA_NEEDED: MSL rating]
Series β€” OptiMOS 3
Continuous Drain Current (ID) at Tc β€” 100 A
Maximum Power Dissipation (Ptot) β€” 167 W
On-Resistance RDS(on) max at VGS=10V β€” 3.4 mOhm
Gate Threshold Voltage VGS(th) β€” 4 V at 93 uA
Pin Configuration β€” 3-Pin (2 + Tab)
Automotive Qualified β€” Yes (per Infineon product page)

Datasheets & Resources

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