IRL540NPBF vs IRLZ44NPBF Comparison
Detailed side-by-side comparison of IRL540NPBF by Infineon and IRLZ44NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRL540NPBF | IRLZ44NPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.86 | $0.68 |
| Manufacturer | Infineon (formerly International Rectifier) | β |
| Part Number | IRL540NPBF | β |
| Transistor Type | N-Channel MOSFET | β |
| Technology | HEXFET (Planar DMOS) | HEXFET (advanced process) |
| Drain-to-Source Voltage (VDS) | 100 V | 55 V |
| Gate-to-Source Voltage (VGS) max | +/-16 V | β |
| Continuous Drain Current (ID) at Tc=25C | 36 A | β |
| Pulsed Drain Current (IDM) | 130 A (pulsed) | 160 A |
| On-Resistance RDS(on) max | 44 mOhm at VGS=5V | β |
| Gate Threshold Voltage (VGS(th)) | 1 V to 2 V (logic level) | 1.0 V to 2.0 V (typ 1.5 V) |
| Total Gate Charge (Qg) | 49.3 nC | 32 nC |
| Power Dissipation (PD) at Tc=25C | 140 W | β |
| Operating Junction Temperature | -55 C to +175 C | -55 Β°C to +175 Β°C |
| Package | TO-220AB (through-hole) | TO-220AB (through-hole, 3 leads) |
| Mounting Type | Through Hole | Through Hole |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes (PBF suffix) | β |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID) at TC=25Β°C | β | 47 A |
| Gate-to-Source Voltage (VGS) Max | β | Β±16 V |
| Static Drain-to-Source On-Resistance (RDS(on)) | β | 22 mΞ© max at VGS=5V, ID=25A |
| Power Dissipation (PD) at TC=25Β°C | β | 110 W |
| Power Dissipation (PD) at TA=25Β°C | β | 3.8 W |
| Thermal Resistance Junction-to-Case (RΞΈJC) | β | 1.4 Β°C/W |
| Logic-Level Gate Drive | β | Yes (fully enhanced at VGS=5V) |