IRLZ44NPBF - 55V 47A N-Ch Logic-Level MOSFET | Infineon
MPN: IRLZ44NPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.42 | $1.42 |
| 10 | $1.18 | $11.80 |
| 100 | $0.92 | $92.00 |
| 500 | $0.78 | $390.00 |
| 1,000 | $0.6779 | $677.90 |
IRLZ44NPBF Overview
A logic-level MOSFET (also called a logic-gate MOSFET or LL-MOSFET) is a power MOSFET whose gate-threshold voltage and full-enhancement gate drive voltage are low enough to be turned fully on by standard digital logic levels (typically 4V-5V VGS). Unlike standard MOSFETs that require 10V VGS to achieve rated RDS(on), logic-level MOSFETs simplify driver design, eliminate the need for gate-driver ICs or charge pumps, and are widely used in microcontroller-driven power switching, battery protection circuits, and low-voltage motor control. The IRLZ44NPBF sits in the broader power MOSFET taxonomy: MOSFET -> power MOSFET -> N-channel enhancement mode -> logic-level N-channel MOSFET.
Key specifications include a continuous drain current ID of 47A at TC=25°C, pulsed drain current IDM of 160A (pulse width limited by SOA), and static drain-to-source on-resistance RDS(on) of 22 mΩ maximum at VGS=5V and ID=25A. The device also features an avalanche-rated body diode, an operating junction temperature range of -55°C to +175°C, and a power dissipation of 110W at TC=25°C. The TO-220AB package provides a low thermal resistance junction-to-case (RθJC) of 1.4°C/W, enabling effective heat-sinking through the mounting tab.
The IRLZ44NPBF is built on Infineon's advanced HEXFET power MOSFET process technology, which uses a vertical DMOS structure with a planar gate. This architecture yields low on-resistance per unit silicon area, high avalanche ruggedness, and fast switching speeds. The device is fully characterized for switching losses at 5V gate drive, which is critical for microcontroller-driven applications where higher VGS would be impractical without a dedicated gate driver.
Typical applications include DC motor speed control (PWM at 1-25 kHz), solenoid and relay drivers, battery protection circuits in 12V-24V lead-acid and lithium packs, low-frequency switch-mode power supply (SMPS) synchronous rectifiers, LED drivers with PWM dimming, and general-purpose high-side/low-side switching in automotive and industrial 12V/24V systems. Its logic-level gate drive also makes it suitable for Arduino/Raspberry Pi GPIO-driven load switches when gate pull-down resistors are added for fail-safe default-off behavior.
When designing with the IRLZ44NPBF, ensure the gate is driven to at least 5V for full enhancement; 3.3V logic alone will not fully turn on the device and will result in excessive RDS(on) and conduction losses. A 100Ω gate resistor is recommended to damp ringing, and a 10kΩ gate-to-source pull-down resistor ensures the MOSFET stays off during MCU reset. The TO-220 tab must be electrically isolated from the heatsink if the drain tab is connected to a non-grounded rail.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the standalone manufacturer datasheet, giving engineers a one-stop reference for sourcing and applying the IRLZ44NPBF.
Drop-in alternatives for IRLZ44NPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRLZ44NPBF (same form factor and footprint) — differing in Total Gate Charge (Qg), Operating Junction Temperature, Package, Drain-to-Source Voltage (VDS), RoHS Status.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRLZ44N
✅ Drop-In📋 Reference alternative (not in catalog)
STP55NF06L
✅ Drop-In📋 Reference alternative (not in catalog)
SUP75N06-08L
✅ Drop-In📋 Reference alternative (not in catalog)
FQP30N06L
✅ Drop-In📋 Reference alternative (not in catalog)
IRFZ44N
✅ Drop-In📋 Reference alternative (not in catalog)
IRLZ44NPBF Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Drain-to-Source Voltage (VDS) | 55 V |
| Continuous Drain Current (ID) at TC=25°C | 47 A |
| Pulsed Drain Current (IDM) | 160 A |
| Gate-to-Source Voltage (VGS) Max | ±16 V |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.0 V (typ 1.5 V) |
| Static Drain-to-Source On-Resistance (RDS(on)) | 22 mΩ max at VGS=5V, ID=25A |
| Total Gate Charge (Qg) | 32 nC |
| Power Dissipation (PD) at TC=25°C | 110 W |
| Power Dissipation (PD) at TA=25°C | 3.8 W |
| Operating Junction Temperature | -55 °C to +175 °C |
| Thermal Resistance Junction-to-Case (RθJC) | 1.4 °C/W |
| Package | TO-220AB (through-hole, 3 leads) |
| Mounting Type | Through Hole |
| Technology | HEXFET (advanced process) |
| Logic-Level Gate Drive | Yes (fully enhanced at VGS=5V) |
| RoHS Status | Compliant |
IRLZ44NPBF Pin Configuration
| Pin 1 | Gate — MOSFET gate drive input; logic-level (fully on at VGS=5V) |
| Pin 2 | Drain — MOSFET drain; connected to load/source of current |
| Pin 3 | Source — MOSFET source; reference for gate drive, typically connected to GND in low-side switching |
Safe Operating Area (DC)
Typical Applications
IRLZ44NPBF is suitable for 6 applications: DC Motor Speed Control (PWM), Solenoid and Relay Driver, Battery Protection Circuit (12V/24V Lead-Acid and Li-ion), Switch-Mode Power Supply Synchronous Rectifier, LED Driver with PWM Dimming, General High-Side/Low-Side Switching in 12V/24V Systems.
DC Motor Speed Control (PWM)
The IRLZ44NPBF's logic-level 5V gate drive and 32 nC total gate charge make it ideal for microcontroller-driven PWM motor speed control at 1-25 kHz switching frequencies. Its 47A continuous and 160A pulsed drain current ratings easily handle DC motor inrush transients (typically 5-7× running current at startup), while the 22 mΩ RDS(on) at VGS=5V keeps conduction losses manageable without a heatsink at currents below 5A. Place a 100Ω gate resistor in series with the gate to damp ringing from the motor's inductive wiring, and add a 10kΩ pull-down from gate to source to ensure the motor defaults off during MCU reset. The -55°C to +175°C junction range covers harsh automotive underhood environments where motor controllers typically operate.
Recommended
Solenoid and Relay Driver
For driving 12V/24V automotive solenoids, the IRLZ44NPBF handles the inductive kickback thanks to its avalanche-rated body diode and ±16V VGS rating. A flyback diode is still recommended across the solenoid for energy-efficient switching, but the device's robust SOA (160A pulsed) absorbs any residual avalanche energy. The logic-level gate drive allows direct connection to a 5V MCU output pin through a 100Ω gate resistor, eliminating the need for a dedicated gate-driver IC. At 1A continuous solenoid current, conduction loss is just 22 mW - essentially negligible - making this part a popular choice for fuel injector drivers, transmission shift solenoids, and HVAC damper actuators in 12V automotive systems.
Recommended
Battery Protection Circuit (12V/24V Lead-Acid and Li-ion)
In battery management systems for 12V lead-acid or 24V Li-ion packs, the IRLZ44NPBF acts as a low-side disconnect switch. Its 55V VDS provides ample headroom for 24V nominal bus (28.8V max float), and the 22 mΩ RDS(on) keeps voltage drop at 10A discharge current under 220 mV - minimizing impact on battery runtime. The logic-level gate drive allows direct control from a 3.3V or 5V BMS microcontroller, though a small gate-driver (or voltage doubler) may be needed if the gate must be held high when the battery is deeply discharged. The TO-220AB package mounts directly to the chassis or a small aluminum plate heatsink for sustained 20-30A discharge currents typical in e-bike and solar battery applications.
Recommended
Switch-Mode Power Supply Synchronous Rectifier
The IRLZ44NPBF serves as a low-side synchronous rectifier in low-to-medium-power SMPS designs (50-200W) where its 22 mΩ RDS(on) significantly outperforms Schottky diode rectification, especially at low output voltages (3.3V, 5V). Its low gate charge of 32 nC allows switching frequencies up to 100 kHz without excessive gate-drive losses. In a typical 12V-to-5V/10A buck converter, replacing a Schottky diode with the IRLZ44NPBF improves efficiency by 5-8 percentage points. For higher-frequency designs (>200 kHz), consider a part with lower Qg; but for 12V-input telecom and industrial DC-DC bricks, the IRLZ44NPBF offers an excellent cost-performance balance.
Recommended
LED Driver with PWM Dimming
The IRLZ44NPBF is a cost-effective constant-current sink for high-power LED strings (10W-50W) requiring PWM dimming control from a microcontroller. Its 47A current rating supports LED strings up to approximately 1A continuous per channel when the LED forward voltage is below 50V (5×10W white LEDs in series, for example). The logic-level gate drive accepts 5V PWM at frequencies up to 1 kHz without dimming flicker, and the fast switching characteristics (typical turn-off delay <50 ns) preserve PWM duty-cycle accuracy. A small gate resistor (47-100Ω) limits ringing on long PCB traces, and a 10kΩ gate pull-down prevents LED turn-on during MCU reset - critical for safe high-brightness LED operation.
Recommended
General High-Side/Low-Side Switching in 12V/24V Systems
For general-purpose load switching in automotive 12V and industrial 24V systems, the IRLZ44NPBF in TO-220AB offers robust performance with through-hole mechanical strength suitable for automotive and industrial environments. Its 55V VDS handles 24V bus systems with jump-start transient margin (typically 36V peak), and the logic-level gate drive simplifies PCB design by eliminating gate-driver ICs. Common uses include heater element switching, fan speed control (low-side PWM), incandescent lamp drivers, and 12V accessory control in automotive body controllers. The TO-220 package withstands vibration and thermal cycling better than SMD alternatives, making it preferred for chassis-mounted automotive ECUs and industrial control panels.
Recommended
Recommended Products Summary
Engineering reference data for IRLZ44NPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRLZ44N | STP55NF06L | SUP75N06-08L | FQP30N06L | IRFZ44N |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | STMicroelectronics | Vishay Intertechnology | onsemi | Infineon |
| Package | TO-220AB | TO-220AB - same | TO-220AB - same | TO-220AB - same | TO-220AB - same | TO-220AB - same |
| Drain-to-Source Voltage (VDS) | 55 V | 55 V (same) | 60 V (+9%) | 60 V (+9%) | 60 V (+9%) | 55 V (same) |
| Continuous Drain Current (ID at TC=25°C) | 47 A | 47 A (same) | 50 A (+6%) | 75 A (+60%) | 32 A (-32%) | 47 A (same) |
| Gate Threshold Voltage (VGS(th)) | 1.0 V - 2.0 V | 1.0 V - 2.0 V (same) | 1.0 V - 2.5 V (logic-level) | 1.0 V - 2.5 V (logic-level) | 1.0 V - 2.5 V (logic-level) | 2.0 V - 4.0 V (standard) |
| Total Gate Charge (Qg) | 32 nC | 32 nC (same) | 60 nC (+88%) | 120 nC (+275%) | 30 nC (-6%) | 48 nC (+50%) |
| Logic-Level (5V) Gate Drive | Yes | Yes | Yes | Yes | Yes | No (requires 10V VGS) |
| RoHS Compliance | Yes (PBF suffix) | No (SnPb termination) | Yes | Yes | Yes | Yes (PBF variant) |
Key Differentiators
- Infineon HEXFET process - lowest RDS(on) in this voltage class for logic-level gate drive (vs FQP30N06L)
- Lower gate charge than 60V alternatives enables higher switching frequency (vs STP55NF06L)
- Pb-free (RoHS) PBF termination for global market compliance (vs IRLZ44N (non-PBF))
Design Notes
Estimated: The IRLZ44NPBF requires VGS >= 5V for full enhancement to achieve the rated 22 mΩ RDS(on). At 3.3V VGS the device is partially enhanced and RDS(on) rises 2-3×, causing excessive conduction loss and self-heating. Verify your MCU GPIO or gate-driver stage can swing to 5V at the gate before designing in this part. For true 3.3V operation, select a MOSFET with VGS(th) max <= 1.5V (e.g., Infineon IRLML2502 in SOT-23).
Estimated: At continuous ID=10A and RDS(on)=22mΩ, conduction loss is P=I²·R = 100·0.022 = 2.2W. With TO-220AB mounted on a 10°C/W heatsink, total junction-to-ambient thermal resistance is ~11.4°C/W, giving TJ rise of 25°C above ambient - safe up to TA=150°C. Without a heatsink (free air, RθJA ~50°C/W), the same 2.2W raises junction temperature by 110°C - so for >5A continuous load, a clip-on or bonded heatsink is mandatory.
Add a 100Ω resistor in series with the gate to dampen ringing from the gate-source and gate-drain capacitances (~1.5 nF Ciss combined). For fail-safe default-off behavior when the MCU resets, place a 10kΩ pull-down resistor from gate to source. If driving the gate with a long PCB trace (>50 mm), use a gate-driver IC near the MOSFET to avoid the trace inductance forming an LC tank with Ciss, which can cause voltage overshoot and EMI.
Compliance Information
RoHS compliant per Infineon product page - 'PBF' suffix explicitly denotes Pb-free matte-tin plating. Halogen-free molding compound. Not AEC-Q100 qualified; for automotive AEC-Q100 applications, request the IRLZ44N automotive variant directly from Infineon.
