IRL540NSTRLPBF vs IRFR120NTRLPBF Comparison
Detailed side-by-side comparison of IRL540NSTRLPBF by Infineon and IRFR120NTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRL540NSTRLPBF | IRFR120NTRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.51 | $0.62 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at Tc=25Β°C | 36 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on)) max @ VGS=10V | 44 mΞ© | β |
| On-Resistance (RDS(on)) max @ VGS=5V | [DATA_NEEDED: RDS(on) at VGS=5V] | β |
| Gate-Source Voltage (VGS) max | Β±16 V | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | Logic-level | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | 49.3 nC | 16.7 nC |
| Power Dissipation (PD) at Tc=25Β°C | 140 W | β |
| Power Dissipation (PD) at TA=25Β°C | 3.8 W | β |
| Operating Temperature Range | -55Β°C to +175Β°C | β |
| Package | TO-263 (D2PAK) | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Avalanche Energy Rated | Yes (single-pulse) | Yes (fully avalanche rated) |
| RoHS Status | Compliant (LPBF suffix indicates lead-free) | Compliant |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| Technology | β | IR MOSFET (HEXFET) |
| Continuous Drain Current (ID) at TC=25C | β | 9.4 A |
| On-Resistance RDS(on) max at VGS=10V | β | 210 mΞ© |
| Power Dissipation (PD) at TC=25C | β | 48 W |
| Operating Junction Temperature Range | β | -55C to +175C |
| Lead-Free Finish | β | Yes (Pb-free) |