IRLB4030PBF vs IRFZ48NSTRLPBF Comparison

Detailed side-by-side comparison of IRLB4030PBF by Infineon and IRFZ48NSTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRLB4030PBF IRFZ48NSTRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $3.10 $1.18
Transistor Type N-Channel MOSFET β€”
Drain-to-Source Voltage (VDS) 100 V 55 V
Continuous Drain Current (ID) at Tc 180 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V 4.3 mOhm β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] β€”
Total Gate Charge (Qg) 87 nC 54 nC
Gate-to-Source Voltage (VGS) max [DATA_NEEDED: VGS absolute maximum, typical +/- 20 V] Β±20 V
Power Dissipation (PD) at Tc 370 W β€”
Operating Temperature Range -55C to +175C β€”
Package TO-220AB D2PAK (TO-263) Surface Mount
Mounting Type Through Hole Surface Mount
Technology HEXFET (StrongIRFET family) β€”
Logic Level Drive Yes (optimized for 4.5 V to 10 V VGS) β€”
Qualification JEDEC β€”
RoHS Status Compliant Compliant
FET Type β€” N-Channel Power MOSFET
Continuous Drain Current (ID) @ Tc=25C β€” 64 A
Static Drain-to-Source On-Resistance (Rds(on)) β€” 14 mΞ© at VGS = 10 V
Gate-to-Source Threshold Voltage (VGS(th)) β€” 2.0 V to 4.0 V
Power Dissipation (Pd) @ Tc=25C β€” 130 W
Power Dissipation (Pd) @ Ta=25C on FR-4 β€” 3.8 W
Operating Junction Temperature β€” -55C to +175C
Packaging β€” Tape & Reel (13-inch reel, TRL)
Lead Finish β€” Lead-free (PBF) matte tin
Technology Family β€” HEXFET advanced process technology

Datasheets & Resources

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