IRLB4030PBF vs IRLB8748PBF Comparison

Detailed side-by-side comparison of IRLB4030PBF by Infineon and IRLB8748PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRLB4030PBF IRLB8748PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $3.10 $0.68
Transistor Type N-Channel MOSFET β€”
Drain-to-Source Voltage (VDS) 100 V β€”
Continuous Drain Current (ID) at Tc 180 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] β€”
On-Resistance RDS(on) max at VGS=10V 4.3 mOhm 4.8 mOhm
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] β€”
Total Gate Charge (Qg) 87 nC 15 nC typical
Gate-to-Source Voltage (VGS) max [DATA_NEEDED: VGS absolute maximum, typical +/- 20 V] β€”
Power Dissipation (PD) at Tc 370 W β€”
Operating Temperature Range -55C to +175C -55C to +175C (junction)
Package TO-220AB β€”
Mounting Type Through Hole Through Hole
Technology HEXFET (StrongIRFET family) β€”
Logic Level Drive Yes (optimized for 4.5 V to 10 V VGS) β€”
Qualification JEDEC β€”
RoHS Status Compliant Compliant (Pb-free PBF suffix)
Drain-Source Voltage (VDS) β€” 30 V
Continuous Drain Current (ID) at TC=25C β€” 92 A
Continuous Drain Current (ID) at TC=100C β€” [DATA_NEEDED: ID at TC=100C]
On-Resistance RDS(on) max at VGS=4.5V β€” [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate-Source Voltage (VGS) max β€” +/- 20 V
Gate Threshold Voltage (VGS(th)) typ β€” [DATA_NEEDED: VGS(th) typical]
Power Dissipation (PD) at TC=25C β€” 75 W
Package Type β€” TO-220AB through-hole
Technology Family β€” StrongIRFET / HEXFET
Channel Type β€” N-Channel
Logic-Level Gate Drive β€” Yes (optimized for 5V VGS)
Qualification Standard β€” JEDEC (Industrial market per datasheet)

Datasheets & Resources

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