IRLB8748PBF vs BSC034N06NSATMA1 Comparison

Detailed side-by-side comparison of IRLB8748PBF by Infineon and BSC034N06NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC034N06NSATMA1

BSC034N06NSATMA1 - 60V 100A 3.4mOhm N-Ch MOSFET | Infineon

BSC034N06NSATMA1 βœ“ Active

Specification Comparison

Parameter IRLB8748PBF BSC034N06NSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.68 $0.65
Drain-Source Voltage (VDS) 30 V 60 V
Continuous Drain Current (ID) at TC=25C 92 A 100 A
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] β€”
On-Resistance RDS(on) max at VGS=10V 4.8 mOhm 3.4 mOhm
On-Resistance RDS(on) max at VGS=4.5V [DATA_NEEDED: RDS(on) at VGS=4.5V] [DATA_NEEDED: RDS(on) at 4.5V]
Gate-Source Voltage (VGS) max +/- 20 V β€”
Gate Threshold Voltage (VGS(th)) typ [DATA_NEEDED: VGS(th) typical] β€”
Total Gate Charge (Qg) 15 nC typical [DATA_NEEDED: Qg]
Power Dissipation (PD) at TC=25C 75 W β€”
Operating Temperature Range -55C to +175C (junction) -55C to +150C
Package Type TO-220AB through-hole β€”
Mounting Type Through Hole Surface Mount
Technology Family StrongIRFET / HEXFET β€”
Channel Type N-Channel β€”
Logic-Level Gate Drive Yes (optimized for 5V VGS) β€”
RoHS Status Compliant (Pb-free PBF suffix) Compliant
Qualification Standard JEDEC (Industrial market per datasheet) β€”
Polarity β€” N-Channel
Gate-Source Voltage (VGS) β€” [DATA_NEEDED: VGS max rating]
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: IDM]
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th)]
Power Dissipation at Ta=25C β€” 2.5 W
Power Dissipation at Tc=25C β€” 74 W
Technology β€” OptiMOS 5
Package β€” PG-TDSON-8-7 (SuperSO8 5x6 mm)
MSL Level β€” [DATA_NEEDED: MSL level]

Datasheets & Resources

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