IRLB8748PBF vs IRF5305PBF Comparison
Detailed side-by-side comparison of IRLB8748PBF by Infineon and IRF5305PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLB8748PBF | IRF5305PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.68 | $0.51 |
| Drain-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID) at TC=25C | 92 A | -31 A |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | [DATA_NEEDED: ID at TC=100C] |
| On-Resistance RDS(on) max at VGS=10V | 4.8 mOhm | β |
| On-Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | β |
| Gate-Source Voltage (VGS) max | +/- 20 V | β |
| Gate Threshold Voltage (VGS(th)) typ | [DATA_NEEDED: VGS(th) typical] | β |
| Total Gate Charge (Qg) | 15 nC typical | 42 nC (typical) |
| Power Dissipation (PD) at TC=25C | 75 W | β |
| Operating Temperature Range | -55C to +175C (junction) | β |
| Package Type | TO-220AB through-hole | β |
| Mounting Type | Through Hole | Through Hole |
| Technology Family | StrongIRFET / HEXFET | β |
| Channel Type | N-Channel | β |
| Logic-Level Gate Drive | Yes (optimized for 5V VGS) | β |
| RoHS Status | Compliant (Pb-free PBF suffix) | Compliant |
| Qualification Standard | JEDEC (Industrial market per datasheet) | β |
| FET Type | β | P-Channel |
| Drain-to-Source Voltage (VDS) | β | -55 V |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissition (PD) at TC=25C | β | 110 W |
| Gate-to-Source Voltage (VGS) max | β | Β±20 V |
| Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V | β | 60 mOhm (typical) |
| Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V ID=-16A | β | [DATA_NEEDED: max RDS(on) at -10V] |
| Gate-to-Drain Charge (Qgd) | β | [DATA_NEEDED: Qgd] |
| Input Capacitance (Ciss) | β | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | β | [DATA_NEEDED: Coss] |
| Turn-On Delay Time (td(on)) | β | [DATA_NEEDED: td(on)] |
| Turn-Off Delay Time (td(off)) | β | [DATA_NEEDED: td(off)] |
| Thermal Resistance, Junction-to-Case (RthJC) | β | [DATA_NEEDED: RthJC] |
| Thermal Resistance, Junction-to-Ambient (RthJA) | β | [DATA_NEEDED: RthJA] |
| Operating Junction Temperature | β | -55C to +175C |
| Package | β | TO-220AB (through-hole, 3-pin + tab) |
| Lead-Free Plating (PBF suffix) | β | Yes (Pb-free) |
| Technology | β | HEXFET (planar DMOS) |