IRLB8748PBF vs IRFB4110PBF Comparison

Detailed side-by-side comparison of IRLB8748PBF by Infineon and IRFB4110PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRLB8748PBF IRFB4110PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.68 $1.55
Drain-Source Voltage (VDS) 30 V 100 V
Continuous Drain Current (ID) at TC=25C 92 A β€”
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] β€”
On-Resistance RDS(on) max at VGS=10V 4.8 mOhm 4.5 mΞ©
On-Resistance RDS(on) max at VGS=4.5V [DATA_NEEDED: RDS(on) at VGS=4.5V] β€”
Gate-Source Voltage (VGS) max +/- 20 V Β±20 V
Gate Threshold Voltage (VGS(th)) typ [DATA_NEEDED: VGS(th) typical] β€”
Total Gate Charge (Qg) 15 nC typical β€”
Power Dissipation (PD) at TC=25C 75 W β€”
Operating Temperature Range -55C to +175C (junction) β€”
Package Type TO-220AB through-hole β€”
Mounting Type Through Hole Through Hole
Technology Family StrongIRFET / HEXFET β€”
Channel Type N-Channel β€”
Logic-Level Gate Drive Yes (optimized for 5V VGS) β€”
RoHS Status Compliant (Pb-free PBF suffix) Compliant (Pb-free suffix)
Qualification Standard JEDEC (Industrial market per datasheet) β€”
Transistor Type β€” N-Channel MOSFET
Continuous Drain Current (ID) at TC=25Β°C β€” 120 A (bond-wire limited)
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical/min/max]
On-Resistance RDS(on) typ at VGS=10V β€” 3.7 mΞ©
Power Dissipation (PD) at TC=25Β°C β€” 370 W
Operating Junction Temperature β€” -55 Β°C to +175 Β°C
Package β€” TO-220AB (through-hole)
Technology β€” HEXFET (planar DMOS)
Lead-Free β€” Yes (PBF suffix denotes Pb-free)

Datasheets & Resources

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