IRLL024NTRPBF vs IRLML0030TRPBF Comparison
Detailed side-by-side comparison of IRLL024NTRPBF by Infineon and IRLML0030TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLL024NTRPBF | IRLML0030TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.22 | $0.13 |
| Polarity | N-Channel | β |
| FET Type | MOSFET, Metal Oxide | N-Channel |
| Operating Mode | Enhancement Mode | β |
| V(BR)DSS (Drain-Source Breakdown Voltage) | 55 V | β |
| Continuous Drain Current (ID) at Ta | 3.1 A | β |
| Pulsed Drain Current (IDM) | 4.4 A | β |
| Static Drain-Source On-Resistance (RDS(on)) | 0.065 ohm | β |
| Total Gate Charge (Qg) | 10.4 nC | 3.6 nC typical |
| Gate Threshold Voltage (VGS(th)) | Logic Level (5 V drive capable) | β |
| Maximum Power Dissipation (Pd) at Ta | 1.0 W | β |
| Maximum Operating Junction Temperature | 175 C | β |
| Package | SOT-223 (4-pin) | Micro3 / SOT-23 (3-pin) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | HEXFET Power MOSFET | IR HEXFET Power MOSFET |
| RoHS Status | Compliant | Compliant |
| Drain-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID) at TA=25C | β | 5.3 A |
| Drain-Source On-Resistance (RDS(on)) max | β | 27 mOhm at VGS=4.5V |
| Gate-Source Threshold Voltage (VGS(th)) | β | Logic-level (5 V optimized) |
| Power Dissipation (PD) at TA=25C | β | 1.3 W |
| Operating Temperature Range | β | -55C to +150C |
| MSL Level | β | 1 (unlimited floor life per JEDEC J-STD-020) |
| Soldering | β | Wave-solder capable |
| Qualification | β | JEDEC standard |