IRLL024NTRPBF - 55V 4.4A N-Channel HEXFET MOSFET | Infineon
MPN: IRLL024NTRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.4 | $0.40 |
| 10 | $0.36 | $3.60 |
| 100 | $0.31 | $31.00 |
| 500 | $0.28 | $140.00 |
| 1,000 | $0.25 | $250.00 |
| 3,000 | $0.22 | $660.00 |
IRLL024NTRPBF Overview
A HEXFET power MOSFET is a type of metal-oxide-semiconductor field-effect transistor (MOSFET) optimized by International Rectifier (now part of Infineon) using a hexagonal cell layout that maximizes channel density per unit area. MOSFETs are voltage-controlled switches belonging to the broader class of discrete semiconductors and the power MOSFET family; they sit hierarchically under transistors, discrete semiconductors, and finally active electronic components. In any power-conversion or load-switching design, the MOSFET functions as the key switching element between a controller IC and the actual load.
This device's advanced process technology delivers ultra-low on-resistance, fast switching speed, and a ruggedized device design that operates reliably up to 175 degrees C junction temperature. The SOT-223 footprint is fully surface-mount compatible with vapor-phase, infrared, or wave soldering and provides roughly 1 W of power dissipation in a typical surface-mount land pattern, while still permitting up to about 4.4 A pulsed drain current thanks to the enlarged tab acting as a heat sink.
The IRLL024NTRPBF architecture is built around Infineon's standard HEXFET planar stripe-cell process combined with a logic-level gate oxide that guarantees full enhancement at V-GS = 4.5 V. This makes the part exceptionally well suited to direct microcontroller GPIO drive without requiring a gate-driver IC or charge pump, while still preserving the ruggedness and avalanche energy rating expected of a 55 V industrial-grade MOSFET.
Typical applications include automotive electronic fuel injection, active suspension, power doors/windows/seats, cruise control, airbag modules, dc-dc converters, and relay/load replacements in 12 V and 24 V systems. The logic-level gate also makes the part attractive as a low-side switch for battery management, LED drivers, and small motor control in compact PCB designs.
When designing with the IRLL024NTRPBF, observe that continuous current is thermally limited - derate to about 0.6 A at 100 degrees C and verify that the SOT-223 tab is soldered to a copper pour of at least 1 square inch to stay below the 1 W dissipation envelope. The logic-level gate allows direct MCU drive, but adding a small gate-source resistor (10-100 ohm) is recommended to suppress ringing.
This page synthesizes distributor pricing, drop-in alternatives, and practical thermal and PCB design notes not found in the manufacturer datasheet, providing a single engineering reference for sourcing and qualifying the IRLL024NTRPBF.
Drop-in alternatives for IRLL024NTRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRLL024NTRPBF (same form factor and footprint) β differing in Package, Technology, Operating Temperature Range, Total Gate Charge (Qg), FET Type.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRLL024NPBF
β Drop-Inπ Reference alternative (not in catalog)
IRFR024NTRPBF
β Drop-Inβ In Stock
$0.31 / Unit
View Datasheet βIRLR024NTRPBF
β Drop-Inβ In Stock
$0.46 / Unit
View Datasheet βIRLL024NTRPBF-TP
β Drop-Inπ Reference alternative (not in catalog)
NTD4906N
β Drop-Inπ Reference alternative (not in catalog)
Si2318
β Drop-Inπ Reference alternative (not in catalog)
IRLL024NTRPBF Maximum Ratings & Electrical Characteristics
| Polarity | N-Channel |
| FET Type | MOSFET, Metal Oxide |
| Operating Mode | Enhancement Mode |
| V(BR)DSS (Drain-Source Breakdown Voltage) | 55 V |
| Continuous Drain Current (ID) at Ta | 3.1 A |
| Pulsed Drain Current (IDM) | 4.4 A |
| Static Drain-Source On-Resistance (RDS(on)) | 0.065 ohm |
| Total Gate Charge (Qg) | 10.4 nC |
| Gate Threshold Voltage (VGS(th)) | Logic Level (5 V drive capable) |
| Maximum Power Dissipation (Pd) at Ta | 1.0 W |
| Maximum Operating Junction Temperature | 175 C |
| Package | SOT-223 (4-pin) |
| Mounting Type | Surface Mount |
| Technology | HEXFET Power MOSFET |
| RoHS Status | Compliant |
IRLL024NTRPBF Pin Configuration
| Pin 1 | Gate β Logic-level gate drive input |
| Pin 2 | Drain β Drain terminal (internally bonded to the tab) |
| Pin 3 | Source β Source terminal |
| Pin 4 | Drain (Tab) β Drain terminal and thermal tab (must be soldered to copper pour) |
Safe Operating Area (DC, TA = 25 C)
Typical Applications
IRLL024NTRPBF is suitable for 6 applications: Automotive Load Switching (12 V), Electronic Fuel Injection (EFI) Solenoid Drive, Power Door / Window / Seat Motor Control, DC-DC Converter Low-Side Switch, LED Driver / PWM Dimming Switch, Relay Replacement / Solid-State Switch.
Automotive Load Switching (12 V)
The IRLL024NTRPBF is widely used as a low-side switch for 12 V automotive loads such as lamps, solenoids, and small motors. Its 55 V drain-source breakdown gives substantial headroom against 12 V load-dump transients (which can reach 40 V), while the logic-level gate (full enhancement at VGS = 4.5 V) allows direct drive from 5 V MCU outputs without a gate driver IC. RDS(on) of 0.065 ohm at VGS = 10 V keeps conduction loss low: at 2 A continuous drain current the device dissipates about 0.26 W. SOT-223 footprint enables pick-and-place assembly on compact ECUs and PCB space savings versus TO-220 or DPAK alternatives. The 4.4 A pulsed rating handles inrush for incandescent bulbs and motor stall currents. The 175 C maximum junction temperature supports underhood environments when the SOT-223 tab is soldered to at least 1 square inch of copper pour for adequate heat-sinking.
Recommended
Electronic Fuel Injection (EFI) Solenoid Drive
The IRLL024NTRPBF suits automotive electronic fuel injection solenoid and injector drive circuits. Its 10.4 nC total gate charge enables fast switching transitions (sub-100 ns) essential for precise PWM fuel injector timing at engine speeds above 6000 RPM, while the HEXFET ruggedized design absorbs avalanche energy from the inductive injector solenoid during turn-off without external snubbers. The 55 V V(BR)DSS withstands automotive transient events including inductive flyback and load dump. Logic-level gate threshold allows direct drive from automotive 5 V microcontrollers such as the Infineon TC1766 or NXP S12, eliminating a discrete gate driver stage. RDS(on) of 0.065 ohm minimizes heat in the underhood ECU environment. The SOT-223 package's enlarged tab supports 1 W dissipation and reflow soldering compatible with automotive PCB assembly lines (AEC-Q101 compatible die).
Recommended
Power Door / Window / Seat Motor Control
The IRLL024NTRPBF is well suited to drive the small brushed DC motors used in automotive power doors, windows, and seat adjusters. Its 4.4 A pulsed current rating easily handles motor inrush (locked-rotor) currents of 6-10 A when paired with PWM soft-start, and the low RDS(on) of 0.065 ohm keeps I^2R losses manageable at 3 A running current. Logic-level gate operation means the MOSFET can be driven directly from automotive body-control MCUs operating from 5 V rails without an intervening gate driver. The HEXFET process technology delivers avalanche ruggedness so the device can absorb the back-EMF energy from motor windings without snubber components. SOT-223 surface-mount packaging enables compact ECUs mounted inside door modules. The 175 C junction rating supports sustained operation in high-ambient door-cavity environments.
Recommended
DC-DC Converter Low-Side Switch
The IRLL024NTRPBF works as the low-side synchronous-rectifier or active-switch element in small non-isolated buck converters delivering up to about 2 A from 12-36 V input rails. Its 55 V V(BR)DSS handles 24 V industrial supplies and telecom intermediate buses, and its logic-level gate allows the controller IC (such as a TL494, UC3843, or modern Infineon IFX91041) to drive the MOSFET directly. RDS(on) of 0.065 ohm keeps synchronous-rectifier conduction loss at about 0.13 W at 2 A load. The 10.4 nC gate charge reduces switching losses at 100-500 kHz switching frequencies. SOT-223 package permits compact converter footprints while the enlarged tab dissipates about 1 W in surface-mount designs, suitable for point-of-load regulators on industrial control boards and POL modules for FPGAs.
Recommended
LED Driver / PWM Dimming Switch
The IRLL024NTRPBF is suitable as a low-side PWM switch for LED drivers and architectural lighting dimmers operating from 12-24 V supplies. Logic-level gate threshold allows direct PWM drive from 3.3 V or 5 V microcontroller timers for high-resolution dimming above 1 kHz where flicker becomes imperceptible. RDS(on) of 0.065 ohm minimizes conduction loss: at 1 A LED string current the dissipation is only 65 mW, requiring minimal thermal management. The 4.4 A pulsed rating handles inrush for LED strings with parallel bypass capacitors. SOT-223 surface-mount footprint fits compact LED-driver PCBs. The HEXFET ruggedness provides avalanche capability for inductive transient events on long LED wiring. This configuration is commonly found in stage lighting, automotive interior lighting, and architectural LED strips.
Recommended
Relay Replacement / Solid-State Switch
The IRLL024NTRPBF is a typical solid-state replacement for electromechanical relays in industrial and automotive subsystems where PCB space and reliability matter. Its 3.1 A continuous rating covers most small-coil relay contacts used in 12 V automotive subsystems and 24 V industrial controls, while logic-level drive eliminates the relay-driver transistor that would otherwise be required for MCU GPIOs. The HEXFET device has no mechanical contacts, so there is no contact bounce, arcing, or wear-out mechanism, dramatically increasing MTBF versus electromechanical relays. Switching speed is sub-microsecond versus several milliseconds for relays, enabling precise timing control. RDS(on) of 0.065 ohm keeps conduction loss comparable to or lower than a relay contact. SOT-223 footprint suits compact PCB designs where TO-220 or TO-262 relays previously dominated.
Recommended
Recommended Products Summary
Engineering reference data for IRLL024NTRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRLL024NPBF | IRFR024NTRPBF | IRLR024NTRPBF | IRLL024NTRPBF-TP | NTD4906N | Si2318 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Micro Commercial Components | onsemi | Vishay |
| Package | SOT-223 | SOT-223 (tube) | DPAK (TO-252) | DPAK (TO-252) | SOT-223 | SOT-223 | SOT-223 |
| V(BR)DSS | 55 V | 55 V | 55 V | 55 V | 60 V | 30 V | 40 V |
| Continuous Drain Current (ID) | 3.1 A | 3.1 A | 3.1 A (continuous, larger tab) | 3.1 A (continuous, larger tab) | 4 A | 11.6 A | 4.5 A |
| Gate Threshold | Logic Level | Logic Level | Logic Level | Logic Level | Logic Level | Logic Level | Logic Level |
Key Differentiators
- Logic-level gate enables direct 5 V MCU drive (vs Standard 10 V MOSFETs in SOT-223)
- HEXFET advanced process yields ultra-low RDS(on) in small SOT-223 (vs Discrete N-MOSFETs in similar packages)
- 175 C maximum junction temperature rating (vs 150 C-rated competing parts)
Design Notes
Estimated: At VGS = 10 V and continuous ID = 3 A, conduction loss is I^2 x RDS(on) = 9 x 0.065 = 0.585 W. With the SOT-223 package thermal resistance from junction to ambient (theta_JA) of about 60 C/W on 1 square inch of 2 oz copper, junction temperature rise above ambient is approximately 0.585 x 60 = 35 C, keeping the part well below its 175 C maximum. Designers should always solder the SOT-223 tab to a copper pour of at least 1 square inch; using minimum footprint will push theta_JA above 100 C/W and risk thermal shutdown under sustained load.
Recommended land pattern: drain tab pad should be at least 5 mm x 6 mm to provide adequate heat-sinking. Place a gate resistor of 10-100 ohm in series with the gate pin to damp high-frequency ringing caused by parasitic L-C resonance between gate capacitance (~10 nC Qg / Coss) and the source lead inductance. Place a small 100 nF ceramic bypass capacitor directly at the device VDD pin if the device is driven by an MCU with shared power rail to suppress logic-rail noise coupling into the gate.
Three common pitfalls to avoid: (1) Driving the gate above the absolute maximum VGS of +/- 20 V will destroy the gate oxide - use a 12 V or 10 V gate-drive clamp; (2) Operating the device in linear mode (partially enhanced) causes simultaneous high voltage and high current across the device, which can easily exceed the SOA curve - use it only as a fully-on switch; (3) Forgetting to connect the Source pin in the schematic when using the SOT-223 tab as a heatsink - the Source must be bonded to ground or the low-side return, otherwise the die has no reference and the part will not turn on.
For switching applications above 50 kHz, minimize the high-current loop area from drain tab through the load to source. Use a star-ground connection so the high-current return does not share copper with the gate-drive or analog ground paths. Keep the gate trace short and away from the drain tab to minimize Cgd-induced dv/dt coupling, which can cause Miller-effect turn-on and shoot-through in half-bridge configurations.
Compliance Information
Pb-free (PBF suffix per Infineon ordering code) and RoHS compliant. Not formally AEC-Q100 qualified per public datasheet; AEC-Q101 qualified die available in automotive-grade siblings such as IRFR024N. Reach SVHC declaration maintained by Infineon product compliance.
