IRLL024NTRPBF vs IRLR024NTRPBF Comparison
Detailed side-by-side comparison of IRLL024NTRPBF by Infineon and IRLR024NTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLL024NTRPBF | IRLR024NTRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.22 | $0.46 |
| Polarity | N-Channel | β |
| FET Type | MOSFET, Metal Oxide | N-Channel MOSFET, Metal Oxide |
| Operating Mode | Enhancement Mode | β |
| V(BR)DSS (Drain-Source Breakdown Voltage) | 55 V | β |
| Continuous Drain Current (ID) at Ta | 3.1 A | β |
| Pulsed Drain Current (IDM) | 4.4 A | β |
| Static Drain-Source On-Resistance (RDS(on)) | 0.065 ohm | β |
| Total Gate Charge (Qg) | 10.4 nC | 10 nC (typical) |
| Gate Threshold Voltage (VGS(th)) | Logic Level (5 V drive capable) | β |
| Maximum Power Dissipation (Pd) at Ta | 1.0 W | β |
| Maximum Operating Junction Temperature | 175 C | β |
| Package | SOT-223 (4-pin) | TO-252AA (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | HEXFET Power MOSFET | HEXFET (Advanced Process Technology) |
| RoHS Status | Compliant | β |
| Drain-to-Source Voltage (Vdss) | β | 55 V |
| Continuous Drain Current (Id) at Tc=25C | β | 17 A |
| Continuous Drain Current (Id) at Tc=100C | β | [DATA_NEEDED: Id at Tc=100C] |
| Rds(on) Max @ Vgs=10V | β | 65 mOhm |
| Gate Threshold Voltage (Vgs(th)) | β | 1.0 V to 2.0 V |
| Power Dissipation (Pd) at Tc=25C | β | 45 W |
| Operating Temperature Range | β | -55 C to +175 C |
| Avalanche Rated | β | Yes (fully avalanche rated) |
| Gate Drive Level | β | Logic-Level |
| Lead-Free / RoHS | β | Lead-Free / RoHS Compliant |
| MSL Level | β | 1 (per JEDEC J-STD-020) |