IRLL2705TRPBF vs BSL215CH6327XTSA1 Comparison
Detailed side-by-side comparison of IRLL2705TRPBF by Infineon and BSL215CH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSL215CH6327XTSA1
BSL215CH6327XTSA1 - 20V 1.5A N+P Complementary OptiMOS | Infineon
BSL215CH6327XTSA1 β ActiveSpecification Comparison
| Parameter | IRLL2705TRPBF | BSL215CH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.22 | $0.21 |
| FET Type | N-Channel MOSFET, Metal Oxide | N-Channel and P-Channel Complementary Pair |
| Technology | HEXFET (IR MOSFET fifth generation) | OptiMOS trench MOSFET |
| Drain-to-Source Voltage (VDS) | 55 V | β |
| Continuous Drain Current (ID) at 25 deg C | 3.8 A | β |
| Peak Drain Current (IDM, pulsed) | 5.2 A | β |
| RDS(on) max at VGS=10V | 40 mOhm | β |
| Total Gate Charge (Qg) | 32 nC | β |
| Gate Drive Level | Logic-Level | β |
| Power Dissipation at TA=25 deg C | 1 W (Ta), 2.1 W (per LCSC listing) | β |
| Operating Temperature Range | -55 deg C to +175 deg C | β |
| Mounting Type | Surface Mount | Surface Mount |
| Package | SOT-223 | β |
| Dynamic dv/dt Rating | Yes | β |
| Lead-Free | Yes (PBF suffix) | Yes |
| RoHS Status | Compliant | Compliant |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS |
| Drain-Source Voltage (V_DS) | β | 20 V |
| Continuous Drain Current (I_D) | β | 1.5 A |
| R_DS(on) Max @ V_GS=4.5V | β | 250 mOhm |
| Gate Threshold Voltage (V_GS(th)) | β | [DATA_NEEDED: gate threshold voltage] |
| Power Dissipation (P_D) | β | 500 mW |
| Package / Case | β | PG-TSOP6-6 (6-pin TSOP) |
| Operating Temperature | β | -55C to +150C |
| Configuration | β | Half-bridge (1 N + 1 P) |
| MSL Level | β | 1 (unlimited) |