IRLL2705TRPBF vs IRF8714TRPBF Comparison
Detailed side-by-side comparison of IRLL2705TRPBF by Infineon and IRF8714TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLL2705TRPBF | IRF8714TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.22 | $0.66 |
| FET Type | N-Channel MOSFET, Metal Oxide | N-Channel |
| Technology | HEXFET (IR MOSFET fifth generation) | HEXFET / StrongIRFET (planar MOSFET) |
| Drain-to-Source Voltage (VDS) | 55 V | β |
| Continuous Drain Current (ID) at 25 deg C | 3.8 A | β |
| Peak Drain Current (IDM, pulsed) | 5.2 A | β |
| RDS(on) max at VGS=10V | 40 mOhm | β |
| Total Gate Charge (Qg) | 32 nC | β |
| Gate Drive Level | Logic-Level | β |
| Power Dissipation at TA=25 deg C | 1 W (Ta), 2.1 W (per LCSC listing) | β |
| Operating Temperature Range | -55 deg C to +175 deg C | -55C to +150C (junction) |
| Mounting Type | Surface Mount | Surface Mount |
| Package | SOT-223 | SO-8 (8-SOIC) |
| Dynamic dv/dt Rating | Yes | β |
| Lead-Free | Yes (PBF suffix) | β |
| RoHS Status | Compliant | β |
| Drain-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID) at TA=25C | β | 14 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-State Resistance (RDS(on)) max at VGS=10V | β | 8.7 mΞ© |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical range] |
| Gate Charge (Qg) typical | β | 8.1 nC |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Power Dissipation (PD) at TA=25C | β | 2.5 W |
| Pin Count | β | 8 |
| Avalanche Rated | β | Yes |
| Lead-Free / RoHS | β | Lead-Free / RoHS Compliant |
| MSL Level | β | 1 (per Infineon package qualification) |